Datasheet 2N7000, 2N7002, VQ1000J, VQ1000P, BS170 (Vishay) - 2
| Manufacturer | Vishay |
| Description | N-Channel 60-V (D-S) MOSFET |
| Pages / Page | 6 / 2 — 2N7000/2N7002, VQ1000J/P, BS170. Vishay Siliconix. Single. Total Quad. … |
| File Format / Size | PDF / 60 Kb |
| Document Language | English |
2N7000/2N7002, VQ1000J/P, BS170. Vishay Siliconix. Single. Total Quad. Parameter. Symbol. 2N7002. VQ1000J. VQ1000P. VQ1000J/P. BS170. Unit
Model Line for this Datasheet
Text Version of Document
2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single Total Quad Parameter Symbol
2N7000
2N7002 VQ1000J VQ1000P VQ1000J/P BS170 Unit
Drain-Source Voltage VDS 60 60 60 60 60 Gate-Source Voltage—Non-Repetitive VGSM "40 "40 "30 "25 V Gate-Source Voltage—Continuous VGS "20 "20 "20 "20 "20 T Continuous Drain Current A= 25_C 0.2 0.115 0.225 0.225 0.5 Continuous Drain Current I (T D J = 150_C) TA= 100_C 0.13 0.073 0.14 0.14 0.175 A Pulsed Drain Currenta IDM 0.5 0.8 1 1 TA= 25_C 0.4 0.2 1.3 1.3 2 0.83 Power Dissipation PD W TA= 100_C 0.16 0.08 0.52 0.52 0.8 Thermal Resistance, Junction-to-Ambient RthJA 312.5 625 96 96 62.5 156 _C/W Operating Junction and T Storage Temperature Range J, Tstg –55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms. SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 70 60 60 VDS = VGS, ID = 1 mA 2.1 0.8 3 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 2.0 1 2.5 VDS = 0 V, VGS = "15 V "10 Gate-Body Leakage IGSS nA VDS = 0 V, VGS = "20 V "100 VDS = 48 V, VGS = 0 V 1 TC = 125_C 1000 Zero Gate Voltage Drain Current IDSS mA VDS = 60 V, VGS = 0 V 1 TC = 125_C 500 VDS = 10 V, VGS = 4.5 V 0.35 0.075 On-State Drain Currentb ID(on) A VDS = 7.5 V, VGS = 10 V 1 0.5 VGS = 4.5 V, ID = 0.075 A 4.5 5.3 VGS = 5 V, ID = 0.05 A 3.2 7.5 Drain-Source On-Resistanceb rDS( DS on) T on) C = 125_C 5.8 13.5 W VGS = 10 V, ID = 0.5 A 2.4 5 7.5 TJ = 125_C 4.4 9 13.5 Forward Transconductanceb gfs VDS = 10 V, ID = 0.2 A 100 80 mS Common Source Output Conductanceb gos VDS = 5 V, ID = 0.05 A 0.5
Dynamic
Input Capacitance Ciss 22 60 50 V Output Capacitance C DS = 25 V, VGS = 0 V oss 11 25 25 pF f = 1 MHz Reverse Transfer Capacitance Crss 2 5 5 www.vishay.com Document Number: 70226
11-2
S-04279—Rev. F, 16-Jul-01 Document Outline Datasheet Disclaimer
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Single Total Quad Parameter Symbol
2N7000
2N7002 VQ1000J VQ1000P VQ1000J/P BS170 Unit
Drain-Source Voltage VDS 60 60 60 60 60 Gate-Source Voltage—Non-Repetitive VGSM "40 "40 "30 "25 V Gate-Source Voltage—Continuous VGS "20 "20 "20 "20 "20 T Continuous Drain Current A= 25_C 0.2 0.115 0.225 0.225 0.5 Continuous Drain Current I (T D J = 150_C) TA= 100_C 0.13 0.073 0.14 0.14 0.175 A Pulsed Drain Currenta IDM 0.5 0.8 1 1 TA= 25_C 0.4 0.2 1.3 1.3 2 0.83 Power Dissipation PD W TA= 100_C 0.16 0.08 0.52 0.52 0.8 Thermal Resistance, Junction-to-Ambient RthJA 312.5 625 96 96 62.5 156 _C/W Operating Junction and T Storage Temperature Range J, Tstg –55 to 150 _C Notes a. Pulse width limited by maximum junction temperature. b. tp v 50 ms. SPECIFICATIONSĊ2N7000 AND 2N7002 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
2N7000 2N7002
Parameter Symbol Test Conditions Typa Min Max Min Max Unit Static
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 10 mA 70 60 60 VDS = VGS, ID = 1 mA 2.1 0.8 3 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 0.25 mA 2.0 1 2.5 VDS = 0 V, VGS = "15 V "10 Gate-Body Leakage IGSS nA VDS = 0 V, VGS = "20 V "100 VDS = 48 V, VGS = 0 V 1 TC = 125_C 1000 Zero Gate Voltage Drain Current IDSS mA VDS = 60 V, VGS = 0 V 1 TC = 125_C 500 VDS = 10 V, VGS = 4.5 V 0.35 0.075 On-State Drain Currentb ID(on) A VDS = 7.5 V, VGS = 10 V 1 0.5 VGS = 4.5 V, ID = 0.075 A 4.5 5.3 VGS = 5 V, ID = 0.05 A 3.2 7.5 Drain-Source On-Resistanceb rDS( DS on) T on) C = 125_C 5.8 13.5 W VGS = 10 V, ID = 0.5 A 2.4 5 7.5 TJ = 125_C 4.4 9 13.5 Forward Transconductanceb gfs VDS = 10 V, ID = 0.2 A 100 80 mS Common Source Output Conductanceb gos VDS = 5 V, ID = 0.05 A 0.5
Dynamic
Input Capacitance Ciss 22 60 50 V Output Capacitance C DS = 25 V, VGS = 0 V oss 11 25 25 pF f = 1 MHz Reverse Transfer Capacitance Crss 2 5 5 www.vishay.com Document Number: 70226
11-2
S-04279—Rev. F, 16-Jul-01 Document Outline Datasheet Disclaimer
