Datasheet IRL3705N (Infineon) - 3
| Manufacturer | Infineon |
| Description | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
| Pages / Page | 9 / 3 — VGS. TOP 15V. 12V. 10V. 8.0V. 6.0V. 4.0V. 3.0V. BOTTOM 2.5V. Fig. 1. Fig. … |
| Revision | 01_02 |
| File Format / Size | PDF / 455 Kb |
| Document Language | English |
VGS. TOP 15V. 12V. 10V. 8.0V. 6.0V. 4.0V. 3.0V. BOTTOM 2.5V. Fig. 1. Fig. 2. Fig. 3. Fig. 4
Model Line for this Datasheet
Text Version of Document
IRL3705NPbF 1000 1000
VGS VGS TOP 15V TOP 15V 12V 12V 10V 10V
)
8.0V
)
8.0V 6.0V
A
6.0V
(A
4.0V
(
4.0V 3.0V 3.0V BOTTOM 2.5V
rent
BOTTOM 2.5V
100 urrent 100 e C ce Cur ourc S to- to-Sour n- 2.5V 10 10 ai ain- Dr I , Dr D D 2.5V I , 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25°C T = J 175°C 1 A 1 A 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics 1000 3.0 I D = 77A ) nce A sta T 2.5 J = 25°C si nt ( e rr T J = 175°C 100 u n Re 2.0 O ) rce C u ource ized o 1.5 -S al -S m o or in-to 10 (N 1.0 Dra Drain-t , n) DI 0.5 (o V = 2 DS 5V DS 20µs PULSE WIDTH R 1 V GS = 10V A 0.0 A 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 GS V , Gate-to-Source Voltage (V) J T , Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance vs. Temperature 3 2018-05-25
VGS VGS TOP 15V TOP 15V 12V 12V 10V 10V
)
8.0V
)
8.0V 6.0V
A
6.0V
(A
4.0V
(
4.0V 3.0V 3.0V BOTTOM 2.5V
rent
BOTTOM 2.5V
100 urrent 100 e C ce Cur ourc S to- to-Sour n- 2.5V 10 10 ai ain- Dr I , Dr D D 2.5V I , 20µs PULSE WIDTH 20µs PULSE WIDTH T = J 25°C T = J 175°C 1 A 1 A 0.1 1 10 100 0.1 1 10 100 V , Drain-to-Source Voltage (V) V , Drain-to-Source Voltage (V) DS DS
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics 1000 3.0 I D = 77A ) nce A sta T 2.5 J = 25°C si nt ( e rr T J = 175°C 100 u n Re 2.0 O ) rce C u ource ized o 1.5 -S al -S m o or in-to 10 (N 1.0 Dra Drain-t , n) DI 0.5 (o V = 2 DS 5V DS 20µs PULSE WIDTH R 1 V GS = 10V A 0.0 A 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 GS V , Gate-to-Source Voltage (V) J T , Junction Temperature (°C)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Normalized On-Resistance vs. Temperature 3 2018-05-25
