Datasheet DGTD120T25S1PT (Diodes) - 3

DGTD120T25S1PT Electrical Characteristics
(@Tvj = +25°C, unless otherwise specified.)
Parameter Symbol Min Typ Max Unit Condition STATIC CHARACTERISTICS
Collector-Emitter Breakdown Voltage BVCES 1200 – – V IC = 500µA, VGE = 0V T – vj = 25°C

2.00

2.40

Collector-Emitter Saturation Voltage Tvj = 150°C VCE(sat) – 2.40 – V IC = 25A, VGE = 15V Tvj = 175°C – 2.50 – T –

2.10

2.60

Diode Forward Voltage vj = 25°C VF V VGE = 0V, IF = 12.5A

Tvj = 175°C – 1.90 – Tvj = 25°C – 2.50 3.00 Diode Forward Voltage Tvj = 150°C VF – 2.55 – V VGE = 0V, IF = 25A Tvj = 175°C – 2.45 – Gate-Emitter Threshold Voltage VGE(th) 5.0

6.0

7.0

V VCE = VGE, IC = 0.85mA

T –

–

250

Zero Gate Voltage Collector Current vj = 25°C ICES µA Tvj = 175°C – – 2500 VCE = 1200V, VGE = 0V

Gate-Emitter Leakage Current IGES – – ±250 nA VGE = 20V, VCE = 0V Transconductance gfs – 16 – S VCE = 20V, IC = 25A
DYNAMIC CHARACTERISTICS
Total Gate Charge

Qg –

204

– Gate-Emitter Charge

Qge

–

34

–

nC

VCE = 960V, IC = 25A, VGE = 15V

Gate-Collector Charge Qgc –

94 –

Input Capacitance

Cies –

3942 –

V Reverse Transfer Capacitance

Cres – 72 – pF

CE = 25V, VGE = 0V, f = 1MHz

Output Capacitance Coes – 142 – Internal Emitter Inductance Measured 5mm (0.197”) L From Case E – 13 – nH – Short Circuit Collector Current Max. 1000 Short VGE = 15V, VCC = 600V, IC(SC) – 121 – A Circuits. Time Between Short Circuits ≥ 1.0s tSC ≤ 10µs, Tvj = 175°C
SWITCHING CHARACTERISTICS
Turn-on Delay Time td(on) –

73 –

Rise time tr –

41 –

ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) –

269 –

IC = 25A, RG = 23Ω, Fall Time tf –

39 –

Inductive Load, Turn-on Switching Energy Eon – 1.44 – Tvj = 25°C Turn-off Switching Energy

Eoff – 0.55 – mJ Total Switching Energy

Ets –

1.99 –

Reverse Recovery Time trr – 100 – ns IF = 25A, diF/dt = 500A/µs, Reverse Recovery Current Irr – 17 – A VR = 600V, Reverse Recovery Charge Qrr – 0.85 – µC Tvj = 25°C Rate Of Fall Of Reverse Current During tb dirr/dt – -376 – A/µs Turn-on Delay Time td(on) –

65 –

Rise time tr –

45 –

ns VGE = 15V, VCC = 600V, Turn-off Delay Time td(off) –

292 –

IC = 25A, RG = 23Ω, Fall Time tf – 75 – Inductive Load, Turn-on Switching Energy Eon – 2.43 – Tvj = 175°C Turn-off Switching Energy

Eoff –

1.09 –

mJ Total Switching Energy

Ets –

3.52 –

Reverse Recovery Time trr –

150 –

ns IF = 25A, diF/dt = 500A/µs, Reverse Recovery Current

Irr –

25 –

A VR = 600V, Reverse Recovery Charge

Qrr – 1.85 – µC Tvj = 175°C Rate Of Fall Of Reverse Current During tb

dirr/dt – -374 – A/µs DGTD120T25S1PT 3 of 10 March 2018 Document Number DS39659 Rev. 1 - 2
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