Datasheet IXTA3N50D2, IXTP3N50D2 (IXYS) - 3
| Manufacturer | IXYS |
| Description | Depletion Mode N-Channel MOSFET |
| Pages / Page | 6 / 3 — IXTA3N50D2 IXTP3N50D2. Fig. 1. Output Characteristics @ TJ = 25oC. Fig. … |
| File Format / Size | PDF / 160 Kb |
| Document Language | English |
IXTA3N50D2 IXTP3N50D2. Fig. 1. Output Characteristics @ TJ = 25oC. Fig. 2. Extended Output Characteristics @ TJ = 25oC
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IXTA3N50D2 IXTP3N50D2 Fig. 1. Output Characteristics @ TJ = 25oC Fig. 2. Extended Output Characteristics @ TJ = 25oC
3.0 16 VGS = 5V VGS = 5V 3V 14 3V 2.5 2V 1V 12 2.0 2V s s re 10 e 0V re p e m p 1.5 1V A m 8 - A ID - ID 6 0V 1.0 -1V 4 0.5 -1V - 2V 2 - 2V 0.0 - 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 VDS - Volts VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. Drain Current @ TJ = 25oC
3.0 1.E+00 VGS = 5V VGS = - 2.50V 2V 2.5 1V 1.E-01 - 2.75V 0V - 3.00V 2.0 1.E-02 s s - 3.25V re re e e p -1V p m 1.5 m 1.E-03 - 3.50V - A - A ID ID - 3.75V 1.0 1.E-04 - 2V - 4.00V 0.5 1.E-05 - 3V 0.0 1.E-06 0 1 2 3 4 5 6 7 0 100 200 300 400 500 600 VDS - Volts VDS - Volts
Fig. 5. Drain Current @ TJ = 100oC Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+00 1.E+08 V ∆VDS = 350V - 100V GS = - 2.75V 1.E+07 1.E-01 - 3.00V s re - 3.25V s 1.E+06 e m p h m 1.E-02 O - 3.50V - - A O TJ = 25oC ID R 1.E+05 - 3.75V TJ = 100oC 1.E-03 1.E+04 - 4.00V 1.E-04 1.E+03 0 100 200 300 400 500 600 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 VDS - Volts VGS - Volts © 2017 IXYS CORPORATION, All Rights Reserved
3.0 16 VGS = 5V VGS = 5V 3V 14 3V 2.5 2V 1V 12 2.0 2V s s re 10 e 0V re p e m p 1.5 1V A m 8 - A ID - ID 6 0V 1.0 -1V 4 0.5 -1V - 2V 2 - 2V 0.0 - 3V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 5 10 15 20 25 30 VDS - Volts VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC Fig. 4. Drain Current @ TJ = 25oC
3.0 1.E+00 VGS = 5V VGS = - 2.50V 2V 2.5 1V 1.E-01 - 2.75V 0V - 3.00V 2.0 1.E-02 s s - 3.25V re re e e p -1V p m 1.5 m 1.E-03 - 3.50V - A - A ID ID - 3.75V 1.0 1.E-04 - 2V - 4.00V 0.5 1.E-05 - 3V 0.0 1.E-06 0 1 2 3 4 5 6 7 0 100 200 300 400 500 600 VDS - Volts VDS - Volts
Fig. 5. Drain Current @ TJ = 100oC Fig. 6. Dynamic Resistance vs. Gate Voltage
1.E+00 1.E+08 V ∆VDS = 350V - 100V GS = - 2.75V 1.E+07 1.E-01 - 3.00V s re - 3.25V s 1.E+06 e m p h m 1.E-02 O - 3.50V - - A O TJ = 25oC ID R 1.E+05 - 3.75V TJ = 100oC 1.E-03 1.E+04 - 4.00V 1.E-04 1.E+03 0 100 200 300 400 500 600 -4.2 -4.0 -3.8 -3.6 -3.4 -3.2 -3.0 -2.8 -2.6 -2.4 VDS - Volts VGS - Volts © 2017 IXYS CORPORATION, All Rights Reserved
