IXTA3N50D2 IXTP3N50D2Fig. 13. CapacitanceFig. 14. Gate Charge 10,000 5 V f = 1 MHz 4 DS = 250V I D = 1.5A 3 I G = 10mA s d Ciss ra 2 a 1,000 1 icoF lts o P 0 - V GS Coss V -1 tance - ci 100 -2 apa C -3 -4 Crss 10 -5 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 15. Forward-Bias Safe Operating AreaFig. 16. Forward-Bias Safe Operating Area@ TC = 25oC@ TC = 75oC 100 100 R R DS(on) Limit DS(on) Limit 10 10 s 25μs re es e 25μs p 100μs per m 100μs - A Am - ID 1ms ID 1 1 1ms 10ms TJ = 150oC 100ms TJ = 150oC 10ms TC = 25oC DC TC = 75oC Single Pulse 100ms Single Pulse DC 0.1 Fig. 17. Maximum Transient 0.