Datasheet BAT41 (STMicroelectronics) - 2
| Manufacturer | STMicroelectronics |
| Description | 100 V, 200 mA Surface Mount General Purpose Signal Schottky Diode |
| Pages / Page | 12 / 2 — Characteristics. BAT41. 1 Characteristics. Table 2 |
| File Format / Size | PDF / 149 Kb |
| Document Language | English |
Characteristics. BAT41. 1 Characteristics. Table 2
Model Line for this Datasheet
Text Version of Document
Characteristics BAT41 1 Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified) Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 100 V IF Continuous forward current 200 mA IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 1 A Tstg Storage temperature range -65 to +150 °C Tj Maximum operating junction temperature 150 °C
Table 3. Thermal parameters Symbol Parameter Value Unit
SOD-123 500 Rth(j-a) Junction to ambient(1) SOT-323, SOD-323 550 °C/W SOD-523, SOT-666 600 1. Epoxy printed circuit board with recommended pad layout
Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C 0.1 I (1) R Reverse leakage current VR = 50 V µA Tj = 100 °C 20 IF = 1 mA 400 450 mV V (2) F Forward voltage drop Tj = 25 °C IF = 200 mA 1000 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 %
Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
C Diode capacitance VR = 1 V, F = 1 MHz 3 10 pF 2/12 Doc ID 12633 Rev 2 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 ˚C, unless otherwise specified) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (d = 1) Figure 3. Reverse leakage current versus reverse applied voltage (typical values) Figure 4. Reverse leakage current versus junction temperature (typical values) Figure 5. Junction capacitance versus reverse applied voltage (typical values) Figure 6. Forward voltage drop versus forward current (typical values) Figure 7. Forward voltage drop versus forward current (typical values) Figure 8. Variation of thermal impedance junction to ambient versus pulse duration Figure 9. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 10. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 11. Thermal resistance junction to ambient versus copper surface under each lead 2 Ordering information scheme Figure 12. Ordering information scheme 3 Package information Table 6. SOD-123 dimensions Figure 13. SOD-123 footprint (dimensions in mm) Table 7. SOD-323 dimensions Figure 14. SOD-323 footprint (dimensions in mm) Table 8. SOD-523 dimensions Figure 15. SOD-523 footprint (dimensions in mm) Table 9. SOT-323 dimensions Figure 16. SOT-323 footprint (dimensions in mm) Table 10. SOT-666 dimensions Figure 17. SOT-666 footprint (dimensions in mm) 4 Ordering information Table 11. Ordering information 5 Revision history Table 12. Document revision history
VRRM Repetitive peak reverse voltage 100 V IF Continuous forward current 200 mA IFSM Surge non repetitive forward current tp = 10 ms Sinusoidal 1 A Tstg Storage temperature range -65 to +150 °C Tj Maximum operating junction temperature 150 °C
Table 3. Thermal parameters Symbol Parameter Value Unit
SOD-123 500 Rth(j-a) Junction to ambient(1) SOT-323, SOD-323 550 °C/W SOD-523, SOT-666 600 1. Epoxy printed circuit board with recommended pad layout
Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
Tj = 25 °C 0.1 I (1) R Reverse leakage current VR = 50 V µA Tj = 100 °C 20 IF = 1 mA 400 450 mV V (2) F Forward voltage drop Tj = 25 °C IF = 200 mA 1000 1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 %
Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit
C Diode capacitance VR = 1 V, F = 1 MHz 3 10 pF 2/12 Doc ID 12633 Rev 2 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 ˚C, unless otherwise specified) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (d = 1) Figure 3. Reverse leakage current versus reverse applied voltage (typical values) Figure 4. Reverse leakage current versus junction temperature (typical values) Figure 5. Junction capacitance versus reverse applied voltage (typical values) Figure 6. Forward voltage drop versus forward current (typical values) Figure 7. Forward voltage drop versus forward current (typical values) Figure 8. Variation of thermal impedance junction to ambient versus pulse duration Figure 9. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 10. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 11. Thermal resistance junction to ambient versus copper surface under each lead 2 Ordering information scheme Figure 12. Ordering information scheme 3 Package information Table 6. SOD-123 dimensions Figure 13. SOD-123 footprint (dimensions in mm) Table 7. SOD-323 dimensions Figure 14. SOD-323 footprint (dimensions in mm) Table 8. SOD-523 dimensions Figure 15. SOD-523 footprint (dimensions in mm) Table 9. SOT-323 dimensions Figure 16. SOT-323 footprint (dimensions in mm) Table 10. SOT-666 dimensions Figure 17. SOT-666 footprint (dimensions in mm) 4 Ordering information Table 11. Ordering information 5 Revision history Table 12. Document revision history
