Datasheet BAT41 (STMicroelectronics) - 3

ManufacturerSTMicroelectronics
Description100 V, 200 mA Surface Mount General Purpose Signal Schottky Diode
Pages / Page12 / 3 — BAT41. Characteristics. Figure 1. Average forward power dissipation …
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Document LanguageEnglish

BAT41. Characteristics. Figure 1. Average forward power dissipation Figure 2. Average forward current versus

BAT41 Characteristics Figure 1 Average forward power dissipation Figure 2 Average forward current versus

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BAT41 Characteristics Figure 1. Average forward power dissipation Figure 2. Average forward current versus versus average forward current ambient temperature (
δ
= 1) P(W) IF(AV)(A)
0.22 0.22 δ = 0.2 δ 0.20 = 0.1 δ = 0.5 0.20 δ = 0.05 0.18 0.18 0.16 δ = 1 0.16 0.14 0.14 0.12 0.12 0.10 0.10 0.08 0.08 0.06 0.06 T T 0.04 0.04 0.02
IF(AV)(A)
0.02 δ
Tamb(°C)
=tp/T tp δ=tp/T tp 0.00 0.00 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 0.18 0.20 0.22 0.24 0 25 50 75 100 125 150
Figure 3. Reverse leakage current versus Figure 4. Reverse leakage current versus reverse applied voltage junction temperature (typical values) (typical values) I (µA) R IR(µA)
1.E+03 1.E+03 V =50V R Tj=150°C 1.E+02 1.E+02 Tj=125°C 1.E+01 1.E+01 Tj=100°C 1.E+00 Tj=75°C 1.E+00 1.E-01 Tj=50°C 1.E-01 T 1.E-02 j=25°C
VR(V) Tj(°C)
1.E-02 1.E-03 0 20 40 60 80 100 0 25 50 75 100 125 150
Figure 5. Junction capacitance versus Figure 6. Forward voltage drop versus reverse applied voltage forward current (typical values) (typical values) C(pF) IFM(A)
10.0 1.E+00 F=1MHz V =30mV OSC RMS Tj=25°C 1.E-01 Tj=75°C 1.0 1.E-02 Tj=-40°C 1.E-03
VR(V) V (V) FM
0.1 1.E-04 1.0 10.0 100.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 Doc ID 12633 Rev 2 3/12 Document Outline Table 1. Device summary 1 Characteristics Table 2. Absolute ratings (limiting values at Tj = 25 ˚C, unless otherwise specified) Table 3. Thermal parameters Table 4. Static electrical characteristics Table 5. Dynamic characteristics Figure 1. Average forward power dissipation versus average forward current Figure 2. Average forward current versus ambient temperature (d = 1) Figure 3. Reverse leakage current versus reverse applied voltage (typical values) Figure 4. Reverse leakage current versus junction temperature (typical values) Figure 5. Junction capacitance versus reverse applied voltage (typical values) Figure 6. Forward voltage drop versus forward current (typical values) Figure 7. Forward voltage drop versus forward current (typical values) Figure 8. Variation of thermal impedance junction to ambient versus pulse duration Figure 9. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 10. Relative variation of thermal impedance junction to ambient versus pulse duration Figure 11. Thermal resistance junction to ambient versus copper surface under each lead 2 Ordering information scheme Figure 12. Ordering information scheme 3 Package information Table 6. SOD-123 dimensions Figure 13. SOD-123 footprint (dimensions in mm) Table 7. SOD-323 dimensions Figure 14. SOD-323 footprint (dimensions in mm) Table 8. SOD-523 dimensions Figure 15. SOD-523 footprint (dimensions in mm) Table 9. SOT-323 dimensions Figure 16. SOT-323 footprint (dimensions in mm) Table 10. SOT-666 dimensions Figure 17. SOT-666 footprint (dimensions in mm) 4 Ordering information Table 11. Ordering information 5 Revision history Table 12. Document revision history
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