Datasheet IXTY02N50D, IXTU02N50D, IXTP02N50D (Littelfuse)

ManufacturerLittelfuse
DescriptionHigh VoltagePower MOSFET
Pages / Page4 / 1 — High Voltage. IXTY02N50D. = 500V. DSX. Power MOSFET. IXTU02N50D. = 200mA. …
File Format / SizePDF / 213 Kb
Document Languageenglish

High Voltage. IXTY02N50D. = 500V. DSX. Power MOSFET. IXTU02N50D. = 200mA. D25. IXTP02N50D. DS(on). N-Channel. TO-252 (IXTY). TO-251 (IXTU)

Datasheet IXTY02N50D, IXTU02N50D, IXTP02N50D Littelfuse

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High Voltage IXTY02N50D V = 500V DSX Power MOSFET IXTU02N50D I = 200mA D25 IXTP02N50D R

30 DS(on) N-Channel D TO-252 (IXTY) G
G S
S
D (Tab)
TO-251 (IXTU) Symbol Test Conditions Maximum Ratings V
T = 25C to 150C 500 V
DSX
J
V
T = 25C to 150C 500 V
DGX
J G
V
Continuous 20 V
GSX
D
V
Transient 30 V S D (Tab)
GSM I
T = 25C 200 mA
D25
C
I
T = 25C, Pulse Width Limited by T 800 mA
TO-220AB (IXTP) DM
C
J P
T = 25C 25 W
D
C T = 25C 1.1 W A
T
- 55 ... +150 C
J T
150 C
JM
G
T
- 55 ... +150 C D S D (Tab)
stg T
Maximum Lead Temperature for Soldering 300 °C
L T
1.6 mm (0.062in.) from Case for 10s 260 °C G = Gate D = Drain
SOLD
S = Source Tab = Drain
M
Mounting Torque (TO-220) 1.13 / 10 Nm/lb.in.
d Weight
TO-252 0.35 g TO-251 0.40 g
Features
TO-220 3.00 g • Normally ON Mode • International Standard Packages
Symbol Test Conditions Characteristic Values
• Low R HDMOSTM Process DS(on) (T = 25C, Unless Otherwise Specified)
Min. Typ. Max.
• Rugged Polysilicon Gate Cell Structure J • Fast Switching Speed
BV
V = -10V, I = 25A 500 V
DSX
GS D
V
V = 25V, I = 25A - 2.5 - 5.0 V
Advantages GS(off)
DS D
I
V = 20V, V = 0V 100 nA • Easy to Mount
GSX
GS DS • Space Savings
I
V = V , V = -10V 10 A
DSX(off)
DS DSX GS • High Power Density T = 125C 250 A J
Applications R
V = 0V, I = 50mA, Note 1 20 30 
DS(on)
GS D
I
V = 0V, V = 25V, Note 1 250 mA • Level Shifting
D(on)
GS DS • Triggers • Solid State Relays • Current Regulators © 2017 IXYS CORPORATION, All Rights Reserved DS98861C(5/17)
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