Datasheet AMP02 (Analog Devices) - 4
| Manufacturer | Analog Devices |
| Description | High Accuracy Instrumentation Amplifier |
| Pages / Page | 12 / 4 — AMP02. 1. RG1. 2. –IN 3. +IN 4. V– 5. REFERENCE 6. OUT 7. V+ 8. RG2. 9. … |
| Revision | E |
| File Format / Size | PDF / 225 Kb |
| Document Language | English |
AMP02. 1. RG1. 2. –IN 3. +IN 4. V– 5. REFERENCE 6. OUT 7. V+ 8. RG2. 9. SENSE. CONNECT SUBSTRATE TO V–. DIE SIZE 0.103 inch
Model Line for this Datasheet
Text Version of Document
AMP02 8 1. RG1 2. –IN 3. +IN 4. V– 5. REFERENCE 6. OUT 7. V+ 8. RG2 9. SENSE CONNECT SUBSTRATE TO V– 1 DIE SIZE 0.103 inch
ⴛ
0.116 inch, 11,948 sq. mils (2.62 mm
ⴛ
2.95 mm, 7.73 sq. mm) NOTE: PINS 1 and 8 are KELVIN CONNECTED
Die Characteristics
WAFER TEST LIMITS* (@ VS =
ⴞ
15 V, VCM = 0 V, TA = 25
ⴗ
C, unless otherwise noted.) AMP02 GBC Parameter Symbol Conditions Limits Unit
Input Offset Voltage VIOS 200 µV max Output Offset Voltage VOOS 8 mV max VS = ± 4.8 V to ± 18 V G = 1000 110 Power Supply PSR G = 100 110 dB Rejection G = 10 95 G = 1 75 Input Bias Current IB 20 nA max Input Offset Current IOS 10 nA max Input Voltage Range IVR Guaranteed by CMR Tests ±11 V min VCM = ± 11 V G = 1000 110 Common-Mode CMR G = 100 110 dB Rejection G = 10 95 G = 1 75 Gain Equation Accuracy G = 50 kΩ + 1, G = 1000 0.7 % max R G Output Voltage Swing VOUT RL = 1 kΩ ±12 V min Supply Current ISY 6 mA max *Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –4– REV. E Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ORDERING GUIDE WAFER TEST LIMITS Typical Performance Characteristics APPLICATIONS INFORMATION Input and Output Offset Voltages Input Bias and Offset Currents Gain Common-Mode Rejection Grounding Sense and Reference Terminals Overvoltage Protection Power Supply Considerations OUTLINE DIMENSIONS Revision History
ⴛ
0.116 inch, 11,948 sq. mils (2.62 mm
ⴛ
2.95 mm, 7.73 sq. mm) NOTE: PINS 1 and 8 are KELVIN CONNECTED
Die Characteristics
WAFER TEST LIMITS* (@ VS =
ⴞ
15 V, VCM = 0 V, TA = 25
ⴗ
C, unless otherwise noted.) AMP02 GBC Parameter Symbol Conditions Limits Unit
Input Offset Voltage VIOS 200 µV max Output Offset Voltage VOOS 8 mV max VS = ± 4.8 V to ± 18 V G = 1000 110 Power Supply PSR G = 100 110 dB Rejection G = 10 95 G = 1 75 Input Bias Current IB 20 nA max Input Offset Current IOS 10 nA max Input Voltage Range IVR Guaranteed by CMR Tests ±11 V min VCM = ± 11 V G = 1000 110 Common-Mode CMR G = 100 110 dB Rejection G = 10 95 G = 1 75 Gain Equation Accuracy G = 50 kΩ + 1, G = 1000 0.7 % max R G Output Voltage Swing VOUT RL = 1 kΩ ±12 V min Supply Current ISY 6 mA max *Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the AMP02 features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. –4– REV. E Document Outline FEATURES APPLICATIONS FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION SPECIFICATIONS ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS ORDERING GUIDE WAFER TEST LIMITS Typical Performance Characteristics APPLICATIONS INFORMATION Input and Output Offset Voltages Input Bias and Offset Currents Gain Common-Mode Rejection Grounding Sense and Reference Terminals Overvoltage Protection Power Supply Considerations OUTLINE DIMENSIONS Revision History
