Datasheet MOC205M, MOC206M, MOC207M, MOC211M, MOC212M, MOC213M, MOC216M, MOC217M (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | 8-pin SOIC Single-Channel Phototransistor Output |
| Pages / Page | 12 / 3 — As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe … |
| Revision | A |
| File Format / Size | PDF / 342 Kb |
| Document Language | English |
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
Model Line for this Datasheet
Text Version of Document
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics
I–IV < 150 VRMS Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage I–III < 300 VRMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage VPR DTI
TS
IS,INPUT Parameter 4000 Vpeak External Creepage ≥4 mm External Clearance ≥4 mm ≥ 0.4 mm Distance Through Insulation (Insulation Thickness)
Case Temperature(1) Input Current(1) PS,OUTPUT Output Power(1)
RIO Insulation Resistance at TS, VIO = 500 V(1) 150 °C 200 mA 300 mW > 109 Ω Note:
1. Safety limit values – maximum values allowed in the event of a failure. ©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5 www.fairchildsemi.com
2 MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler Safety and Insulation Ratings
data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Characteristics
I–IV < 150 VRMS Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage I–III < 300 VRMS Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR,
Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 904 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR,
100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1060 Vpeak VIORM Maximum Working Insulation Voltage 565 Vpeak VIOTM Highest Allowable Over-Voltage VPR DTI
TS
IS,INPUT Parameter 4000 Vpeak External Creepage ≥4 mm External Clearance ≥4 mm ≥ 0.4 mm Distance Through Insulation (Insulation Thickness)
Case Temperature(1) Input Current(1) PS,OUTPUT Output Power(1)
RIO Insulation Resistance at TS, VIO = 500 V(1) 150 °C 200 mA 300 mW > 109 Ω Note:
1. Safety limit values – maximum values allowed in the event of a failure. ©2005 Fairchild Semiconductor Corporation
MOC20xM, MOC21xM Rev. 1.5 www.fairchildsemi.com
2 MOC20xM, MOC21xM — 8-pin SOIC Single-Channel Phototransistor Output Optocoupler Safety and Insulation Ratings
