Datasheet TW070J120B (Toshiba) - 3

TW070J120B 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = +25/-10 V, VDS = 0 V   ±0.5 µA Drain cut-off current IDSS VDS = 1200 V, VGS = 0 V  0.2 10 Ta = 175 ,  3.0  VDS = 1200 V, VGS = 0 V Drain-source breakdown V(BR)DSS ID = 1 mA, VGS = 0 V 1200   V voltage Gate threshold voltage (Note 2) Vth VDS = 10 V, ID = 20 mA 4.2  5.8 Drain-source on-resistance RDS(ON) VGS = 20 V, ID = 18 A  70 90 mΩ Ta = 150 ,  87  VGS = 20 V, ID = 18 A Note 2: Please be sure to IGSS (VGS = 25 V) test before the Vth test. 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss VDS = 800 V, VGS = 0 V,  1680  pF Reverse transfer capacitance C f = 100 kHz rss  8  Output capacitance Coss  109  Coss stored energy Eoss  42  µJ Gate resistance rg VDS = OPEN, f = 100 kHz  3.5  Ω Turn-on delay time td(on) See Fig. 6.5.1  17  ns Switching time (rise time) t See Fig. 6.5.2 r  7  Turn-off delay time td(off)  40  Switching time (fall time) tf  35  Turn-on switching loss Eon  0.380  mJ Turn-off switching loss Eoff  0.035  6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Total gate charge (gate-source plus Qg VDD ≈ 800 V, VGS = 20 V,  67  nC gate-drain) ID = 18 A Gate-source charge 1 Qgs1  13  Gate-drain charge Qgd  25  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Diode forward current (DC) (Note 3) IF Tc = 25   36 A Tc = 100   29.6 Diode forward current (Note 3) IFP Tc = 25   72 (pulsed) Tc = 100   32 Diode forward voltage VDSF IDR = 10 A, VGS = -5 V  -1.35 -1.80 V Ta = 150 ,  -1.70  IDR = 10 A, VGS = -5 V Reverse recovery time trr IDR = 10 A, VGS = 0 V,  22  ns Reverse recovery charge Q VDD = 800 V, -dIDR/dt = 1000 A/µs rr  170  nC Peak reverse recovery Irr  15  A current Note 3: Ensure that the channel temperature does not exceed 175 . ©2020 3 2020-08-05 Toshiba Electronic Devices & Storage Corporation Rev.2.0