eGaN® FET DATASHEET EPC2059 Dynamic Characteristics (TJ = 25°C unless otherwise stated)PARAMETERTEST CONDITIONSMINTYPMAXUNIT CISS Input Capacitance# 633 836 CRSS Reverse Transfer Capacitance VDS = 85 V, VGS = 0 V 1.6 COSS Output Capacitance# 267 401 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 2) 332 VDS = 0 to 85 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 3) 414 RG Gate Resistance 0.5 Ω QG Total Gate Charge# VDS = 85 V, VGS = 5 V, ID = 10 A 5.7 7.4 QGS Gate-to-Source Charge 1.3 QGD Gate-to-Drain Charge VDS = 85 V, ID = 10 A 0.9 nC QG(TH) Gate Charge at Threshold 1.0 QOSS Output Charge# VDS = 85 V, VGS = 0 V 35 53 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS. Figure 1: Typical Output Characteristics at 25°CFigure 2: Transfer Characteristics 100 100 25˚C 80 125˚C 80 VDS = 3 V DS 60 60 VGS = 5 V 40 V – Drain Current (A) GS = 4 V – Drain Current (A) 40