eGaN® FET DATASHEET EPC2059 EPC2059 – Enhancement Mode Power Transistor
VDS , 170 V
RDS(on) , 9 mΩ
ID , 24 A D
G EFFICIENT POWER CONVERSION
HAL S Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows
very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally
low QG and zero QRR. The end result is a device that can handle tasks where very high switching
frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings
PARAMETER
VDS
ID Drain-to-Source Voltage (Continuous) VALUE UNIT 170 V Continuous (TA = 25°C) 24 Pulsed (25°C, TPULSE = 300 µs) 102 Gate-to-Source Voltage 6 Gate-to-Source Voltage -4 TJ Operating Temperature -40 to 150 TSTG Storage Temperature -40 to 150 VGS A
V
°C Applications
• DC-DC Converters
• Sync rectification for AC/DC & DC-DC
• USB-C PD Quick Chargers & Adaptors
• BLDC Motor Drives
• Lidar
• Class-D Audio Benefits Thermal Characteristics
PARAMETER EPC2059 eGaN® FETs are supplied only in
passivated die form with solder bars.
Die Size: 2.8 mm x 1.4 mm TYP RθJC Thermal Resistance, Junction-to-Case 0.9 RθJB Thermal Resistance, Junction-to-Board 3 RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 63 UNIT …
