Datasheet MASTERGAN2 (STMicroelectronics) - 8
| Manufacturer | STMicroelectronics |
| Description | High power density 600V Half bridge driver with two enhancement mode GaN HEMT |
| Pages / Page | 29 / 8 — MASTERGAN2. GaN power transistor. 4.2. Table 6. GaN power transistor … |
| File Format / Size | PDF / 1.6 Mb |
| Document Language | English |
MASTERGAN2. GaN power transistor. 4.2. Table 6. GaN power transistor electrical characteristics. Symbol. Parameter. Test condition
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MASTERGAN2 GaN power transistor 4.2 GaN power transistor Table 6. GaN power transistor electrical characteristics
VGS = 6 V; TJ = 25°C, unless otherwise specified
Symbol Parameter Test condition Min Typ Max Unit GaN on/off states
Low side IDSS < 18 µA (1) V(BR)DS Drain-source breakdown voltage High side IDSS < 13.3 µA(1) 650 V VGS = 0 V V I DS = 600 V DSS_LS Zero gate voltage drain current - low side 0.7 µA VGS = 0 V V I DS = 600 V DSS_HS Zero gate voltage drain current - high side 0.5 µA VGS = 0 V VDS = VGS VGS(th) Gate threshold voltage Low side, ID = 2.5 mA (1) 1.7 V High side, ID = 1.7 mA (1) IGS_LS Gate to source current - Low side VDS = 0 V (2) 57 µA IGS_HS Gate to source current - High side VDS = 0 V(2) 40 µA TJ = 25°C 150 220 RDS(on)_LS Static drain-source on-resistance - Low side ID = 3.2 A mΩ TJ = 125°C (2) 330 TJ = 25°C 225 300 RDS(on)_HS Static drain-source on-resistance - High side ID = 2.2 A mΩ TJ = 125°C (2) 495 1. Tested on wafer. 2. Value estimated by characterization, not tested in production.
DS13597
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Rev 1 page 8/29
Document Outline Features Application Description 1 Block diagram 2 Pin description and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history Contents List of tables List of figures
MASTERGAN2 GaN power transistor 4.2 GaN power transistor Table 6. GaN power transistor electrical characteristics
VGS = 6 V; TJ = 25°C, unless otherwise specified
Symbol Parameter Test condition Min Typ Max Unit GaN on/off states
Low side IDSS < 18 µA (1) V(BR)DS Drain-source breakdown voltage High side IDSS < 13.3 µA(1) 650 V VGS = 0 V V I DS = 600 V DSS_LS Zero gate voltage drain current - low side 0.7 µA VGS = 0 V V I DS = 600 V DSS_HS Zero gate voltage drain current - high side 0.5 µA VGS = 0 V VDS = VGS VGS(th) Gate threshold voltage Low side, ID = 2.5 mA (1) 1.7 V High side, ID = 1.7 mA (1) IGS_LS Gate to source current - Low side VDS = 0 V (2) 57 µA IGS_HS Gate to source current - High side VDS = 0 V(2) 40 µA TJ = 25°C 150 220 RDS(on)_LS Static drain-source on-resistance - Low side ID = 3.2 A mΩ TJ = 125°C (2) 330 TJ = 25°C 225 300 RDS(on)_HS Static drain-source on-resistance - High side ID = 2.2 A mΩ TJ = 125°C (2) 495 1. Tested on wafer. 2. Value estimated by characterization, not tested in production.
DS13597
-
Rev 1 page 8/29
Document Outline Features Application Description 1 Block diagram 2 Pin description and connection diagram 2.1 Pin list 3 Electrical Data 3.1 Absolute maximum ratings 3.2 Recommended operating conditions 3.3 Thermal data 4 Electrical characteristics 4.1 Driver 4.2 GaN power transistor 5 Device characterization values 6 Functional description 6.1 Logic inputs 6.2 Bootstrap structure 6.3 VCC supply pins and UVLO function 6.4 VBO UVLO protection 6.5 Thermal shutdown 7 Typical application diagrams 8 Package information 8.1 QFN 9 x 9 x 1 mm, 31 leads, pitch 0.6 mm package information 9 Suggested footprint 10 Ordering information Revision history Contents List of tables List of figures
