Datasheet HMC409 (Analog Devices)

ManufacturerAnalog Devices
Description1 Watt Power Amplifier SMT, 3.3 - 3.8 GHz
Pages / Page8 / 1 — HMC409LP4E. GaAs InGaP HBT 1 WATT. POWER AMPLIFIER, 3.3 - 3.8 GHz. …
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HMC409LP4E. GaAs InGaP HBT 1 WATT. POWER AMPLIFIER, 3.3 - 3.8 GHz. Typical Applications. Features. Functional Diagram

Datasheet HMC409 Analog Devices

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HMC409LP4E
v04.1217
GaAs InGaP HBT 1 WATT POWER AMPLIFIER, 3.3 - 3.8 GHz Typical Applications Features
This amplifier is ideal for use as a power Gain: 31 dB T amplifier for 3.3 - 3.8 GHz applications: 40% pAe @ +32.5 dBm pout m • wimAX 802.16 2% eVm @ pout = +22 dBm s • fixed wireless Access with 54mbps ofDm signal r - • wireless local loop +46 dBm output ip3 e integrated power Control (Vpd) w
Functional Diagram
single +5V supply o p
General Description
The HmC409lp4e are high efficiency GaAs inGap HBT mmiC power amplifiers operating from 3.3 to r & 3.8 GHz. The amplifier is packaged in a low cost, A e leadless smT package. Utilizing a minimum of external components the amplifier provides 31 dB of gain and +32.5 dBm of saturated power from a lin +5V supply voltage. The power control (Vpd) can be used for full power down or rf output power/current s - control. for +22 dBm ofDm output power (64 QAm, r 54 mbps), the HmC409lp4e achieve an error vector ie magnitude (eVm) of 2%, meeting wimAX 802.16 lin- earity requirements. lif p m
Electrical Specifications, T = +25° C, Vs = +5V, Vpd = +5V, Vbias=+5V
A
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parameter min. Typ. max. min. Typ. max. min. Typ. max. Units frequency range 3.3 - 3.4 3.4 - 3.6 3.6 - 3.8 GHz Gain 30 32 29 31.5 28 30 dB Gain Variation over Temperature 0.04 0.05 0.04 0.05 0.035 0.045 dB/ °C input return loss 10 15 15 dB output return loss 13 14 10 dB output power for 1dB Compression (p1dB) 28 30 28 30.5 28 30.5 dBm saturated output power (psat) 32 32.5 32 dBm output Third order intercept (ip3) [2] 41 45 42 45.5 41 45 dBm error Vector magnitude @ 3.5 GHz 2 % (54 mbps ofDm signal @ +22 dBm pout) noise figure 5.8 5.8 6 dB supply Current (icq) Vs= Vcc1 + Vcc2= +5V 615 615 615 mA Control Current (ipd) Vpd = +5V 4 4 4 mA switching speed ton, toff 20 20 20 ns Bias Current (ibias) 10 10 10 mA note 1: specifications and data reflect HmC409lp4e measured using the application circuit found herein. Contact the HmC Applications Group for assistance in optimizing performance for your application. note 2: Two-tone output power of +15 dBm per tone, 1 mHz spacing. Information furnished by Analog Devices is believed to be accurate and reliable. However, no For price, delivery, and to place orders: Analog Devices, Inc., responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
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rights of third parties that may result from its use. Specifications subject to change without notice. No Phone: 781-329-4700 • Order online at www.analog.com license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. Application Support: Phone: 1-800-ANALOG-D Document Outline Typical Applications Features Functional Diagram General Description Electrical Specifications EVM vs. Temperature @ 3.5 GHz OFDM 54 Mbps Signal Power Dissipation Gain, Power & Quiescent Supply Current vs. Vpd @ 3.5 GHz Noise Figure vs. Temperature Gain & Power vs. Supply Voltage Power Compression @ 3.5 GHz Output IP3 vs. Temperature Psat vs. Temperature P1dB vs. Temperature Power Down Isolation vs. Temperature Reverse Isolation vs. Temperature Output Return Loss vs. Temperature Input Return Loss vs. Temperature Gain vs. Temperature Broadband Gain & Return Loss Absolute Maximum Ratings Typical Supply, Current vs. Supply Voltage, Vcc1 = Vcc2 = Vpd Outline Drawing Package Information Application Circuit Pin Descriptions Evaluation PCB List of Materials
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