Datasheet NTD4815NH (ON Semiconductor) - 3
| Manufacturer | ON Semiconductor |
| Description | Power MOSFET30 V, 35 A, Single N--Channel, DPAK/IPAK |
| Pages / Page | 9 / 3 — NTD4815NH. THERMAL RESISTANCE MAXIMUM RATINGS. Parameter. Symbol. Value. … |
| Revision | 3 |
| File Format / Size | PDF / 353 Kb |
| Document Language | English |
NTD4815NH. THERMAL RESISTANCE MAXIMUM RATINGS. Parameter. Symbol. Value. Unit. ELECTRICAL CHARACTERISTICS. Test Condition. Min. Typ. Max
Model Line for this Datasheet
Text Version of Document
NTD4815NH THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit
Junction- to- Case (Drain) RθJC 4.6 °C/W Junction- to- TAB (Drain) RθJC- TAB 3.5 Junction- to- Ambient – Steady State (Note 1) RθJA 78 Junction- to- Ambient – Steady State (Note 2) RθJA 119 1. Surface- mounted on FR4 board using 1 sq- in pad, 1 oz Cu. 2. Surface- mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS
Drain- to- Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain- to- Source Breakdown Voltage V(BR)DSS/ 25 Temperature Coefficient T mV/°C J Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25 °C 1 VDS = 24 V mA TJ = 125°C 10 Gate- to- Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V Negative Threshold Temperature VGS(TH)/TJ 5.6 Coefficient mV/°C Drain- to- Source On Resistance RDS(on) VGS = 10 V to ID = 30 A 12 15 11.5 V ID = 15 A 11.5 mΩ VGS = 4.5 V ID = 20 A 21.5 27.7 ID = 15 A 20.1 Forward Transconductance gFS VDS = 15 V, ID = 10 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance CISS 845 Output Capacitance COSS VGS = 0 V, f = 1.0 MHz, VDS = 12 V 183 pF Reverse Transfer Capacitance CRSS 103 Total Gate Charge QG(TOT) 6.4 6.8 Threshold Gate Charge QG(TH) 1.5 VGS = 4.5 V, VDS = 15 V; ID = 30 A nC Gate- to- Source Charge QGS 2.9 Gate- to- Drain Charge QGD 2.7 Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V; 15.2 nC ID = 30 A
SWITCHING CHARACTERISTICS
(Note 4) Turn- On Delay Time td(ON) 11.3 Rise Time tr V 17.6 GS = 4.5 V, VDS = 15 V, I ns Turn- Off Delay Time t D = 15 A, RG = 3.0 Ω d(OFF) 11 Fall Time tf 2.8 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures.
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Junction- to- Case (Drain) RθJC 4.6 °C/W Junction- to- TAB (Drain) RθJC- TAB 3.5 Junction- to- Ambient – Steady State (Note 1) RθJA 78 Junction- to- Ambient – Steady State (Note 2) RθJA 119 1. Surface- mounted on FR4 board using 1 sq- in pad, 1 oz Cu. 2. Surface- mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise specified)
Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS
Drain- to- Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 V Drain- to- Source Breakdown Voltage V(BR)DSS/ 25 Temperature Coefficient T mV/°C J Zero Gate Voltage Drain Current IDSS VGS = 0 V, TJ = 25 °C 1 VDS = 24 V mA TJ = 125°C 10 Gate- to- Source Leakage Current IGSS VDS = 0 V, VGS = ±20 V ±100 nA
ON CHARACTERISTICS
(Note 3) Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250 mA 1.5 2.5 V Negative Threshold Temperature VGS(TH)/TJ 5.6 Coefficient mV/°C Drain- to- Source On Resistance RDS(on) VGS = 10 V to ID = 30 A 12 15 11.5 V ID = 15 A 11.5 mΩ VGS = 4.5 V ID = 20 A 21.5 27.7 ID = 15 A 20.1 Forward Transconductance gFS VDS = 15 V, ID = 10 A 6.0 S
CHARGES AND CAPACITANCES
Input Capacitance CISS 845 Output Capacitance COSS VGS = 0 V, f = 1.0 MHz, VDS = 12 V 183 pF Reverse Transfer Capacitance CRSS 103 Total Gate Charge QG(TOT) 6.4 6.8 Threshold Gate Charge QG(TH) 1.5 VGS = 4.5 V, VDS = 15 V; ID = 30 A nC Gate- to- Source Charge QGS 2.9 Gate- to- Drain Charge QGD 2.7 Total Gate Charge QG(TOT) VGS = 11.5 V, VDS = 15 V; 15.2 nC ID = 30 A
SWITCHING CHARACTERISTICS
(Note 4) Turn- On Delay Time td(ON) 11.3 Rise Time tr V 17.6 GS = 4.5 V, VDS = 15 V, I ns Turn- Off Delay Time t D = 15 A, RG = 3.0 Ω d(OFF) 11 Fall Time tf 2.8 3. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperatures.
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