Datasheet RFD10P03L, RFD10P03LSM, RFP10P03L (Intersil) - 3

ManufacturerIntersil
Description10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET
Pages / Page8 / 3 — RFD10P03L, RFD10P03LSM, RFP10P03L. Typical Performance Curves. 1.2. -12. …
File Format / SizePDF / 145 Kb
Document LanguageEnglish

RFD10P03L, RFD10P03LSM, RFP10P03L. Typical Performance Curves. 1.2. -12. 1.0. -10. TIPLIER. 0.8. TION MUL A 0.6. 0.4

RFD10P03L, RFD10P03LSM, RFP10P03L Typical Performance Curves 1.2 -12 1.0 -10 TIPLIER 0.8 TION MUL A 0.6 0.4

Model Line for this Datasheet

Text Version of Document

RFD10P03L, RFD10P03LSM, RFP10P03L Typical Performance Curves
Unless Otherwise Specified
1.2 -12 1.0 -10 TIPLIER 0.8 -8 TION MUL A 0.6 -6 0.4 -4 , DRAIN CURRENT (A) I D WER DISSIP 0.2 -2 PO 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE CASE TEMPERATURE 2.0 ANCE 1.0 0.5 0.2 0.1 PDM 0.1 0.05 0.02 t1 0.01 t2 SINGLE PULSE , NORMALIZED THERMAL IMPED NOTES: DUTY FACTOR: D = t1/t2
θ
JC PEAK TJ = PDM x Z
θ
JC x R
θ
JC+ TC Z 0.01 10-3 10-2 10-1 100 10-5 10-4 101 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE -100 -100 T T J = MAX RATED C = 25oC TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT CAPABILITY AS FOLLOWS: 100
µ
s ABILITY (A) VGS = -10V 175

T

C

I = I
 
25 ------------ 150
 
VGS = -5V -10 1ms TRANSCONDUCTANCE DRAIN CURRENT (A) , MAY LIMIT CURRENT 10ms I D IN THIS REGION OPERATION IN THIS -10 AREA MAY BE 100ms PEAK CURRENT CAP , LIMITED BY r DC DS(ON) VDSS MAX = -30V I DM -1 -5 -1 -10 -100 10-5 10-4 10-3 10-2 10-1 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (s) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
7-5
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