Datasheet STD4NK50Z-1, STD4NK50ZT4 (STMicroelectronics)

STD4NK50Z-1, STD4NK50ZT4
Datasheet N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH™ Power MOSFETs in IPAK and DPAK packages
Features Order codes VDS RDS(on) max. PTOT Package
TAB TAB STD4NK50Z-1 IPAK 2 3 500 V 2.7 Ω 45 W 3 1 2 STD4NK50ZT4 DPAK
IPAK
1
DPAK
• Extremely high dv/dt capability • 100% avalanche tested • Gate charge minimized D(2, TAB) • Very low intrinsic capacitance • Zener-protected G(1)
Applications
• Switching applications S(3) AM01475V1
Description
These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications.
Product status link
STD4NK50Z-1 STD4NK50ZT4
DS2913
-
Rev 3
-
August 2018
www.st.com For further information contact your local STMicroelectronics sales office. Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 IPAK (TO-251) type A package information 4.2 IPAK (TO-251) type C package information 4.3 DPAK (TO-252) type A package information 4.4 DPAK (TO-252) type C package information 4.5 DPAK (TO-252) packing information 5 Ordering information Revision history