Datasheet STD4NK50Z-1, STD4NK50ZT4 (STMicroelectronics) - 4
| Manufacturer | STMicroelectronics |
| Description | N-channel 500 V, 2.2 Ω typ., 3 A SuperMESH Power MOSFETs in IPAK and DPAK packages |
| Pages / Page | 23 / 4 — STD4NK50Z-1, STD4NK50ZT4. Electrical characteristics. Table 7. … |
| File Format / Size | PDF / 585 Kb |
| Document Language | English |
STD4NK50Z-1, STD4NK50ZT4. Electrical characteristics. Table 7. Source-drain diode. Symbol. Parameter. Test conditions. Min. Typ. Max
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STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 3 A ISDM (1) Source-drain current (pulsed) - 12 VSD (2) Forward on voltage ISD = 3 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs - 260 ns Q V rr Reverse recovery charge DD = 40 V, Tj = 150 °C - 935 nC (see Figure 15. Test circuit for I inductive load switching and RRM Reverse recovery current - 7.2 A diode recovery times) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit
V Gate-source breakdown (BR)GSO I voltage GS = ±1 mA, ID = 0 A ±30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
DS2913
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Rev 3 page 4/23
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 IPAK (TO-251) type A package information 4.2 IPAK (TO-251) type C package information 4.3 DPAK (TO-252) type A package information 4.4 DPAK (TO-252) type C package information 4.5 DPAK (TO-252) packing information 5 Ordering information Revision history
STD4NK50Z-1, STD4NK50ZT4 Electrical characteristics Table 7. Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD Source-drain current - 3 A ISDM (1) Source-drain current (pulsed) - 12 VSD (2) Forward on voltage ISD = 3 A, VGS = 0 V - 1.6 V trr Reverse recovery time ISD = 3 A, di/dt = 100 A/µs - 260 ns Q V rr Reverse recovery charge DD = 40 V, Tj = 150 °C - 935 nC (see Figure 15. Test circuit for I inductive load switching and RRM Reverse recovery current - 7.2 A diode recovery times) 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit
V Gate-source breakdown (BR)GSO I voltage GS = ±1 mA, ID = 0 A ±30 - - V The built-in back-to-back Zener diodes are specifically designed to enhance the ESD performance of the device. The Zener voltage facilitates efficient and cost-effective device integrity protection, thus eliminating the need for additional external componentry.
DS2913
-
Rev 3 page 4/23
Document Outline 1 Electrical ratings 2 Electrical characteristics 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package information 4.1 IPAK (TO-251) type A package information 4.2 IPAK (TO-251) type C package information 4.3 DPAK (TO-252) type A package information 4.4 DPAK (TO-252) type C package information 4.5 DPAK (TO-252) packing information 5 Ordering information Revision history
