Datasheet NJW21193G, NJW21194G (ON Semiconductor) - 8

ManufacturerON Semiconductor
Description16 Amperes Complementary Silicon Power Transistors 250 Volts, 200 Watts
Pages / Page9 / 8 — PACKAGE DIMENSIONS. TO−3P−3LD. A SEATING. PLANE. SCALE 1:1. MILLIMETERS. …
File Format / SizePDF / 243 Kb
Document LanguageEnglish

PACKAGE DIMENSIONS. TO−3P−3LD. A SEATING. PLANE. SCALE 1:1. MILLIMETERS. DIM. MIN. NOM. MAX. 3X D. GENERIC MARKING. DIAGRAM*

PACKAGE DIMENSIONS TO−3P−3LD A SEATING PLANE SCALE 1:1 MILLIMETERS DIM MIN NOM MAX 3X D GENERIC MARKING DIAGRAM*

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MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS TO−3P−3LD
CASE 340AB−01 ISSUE A DATE 30 OCT 2007 NOTES:
A SEATING
1. DIMENSIONING AND TOLERANCING PER ASME
B B PLANE C
Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS
Q U E
3. DIMENSION b APPLIES TO PLATED TERMINAL
4
AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP.
SCALE 1:1
4. DIMENSION A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS.
A L MILLIMETERS DIM MIN NOM MAX A
19.70 19.90 20.10
B
15.40 15.60 15.80
C
4.60 4.80 5.00
D
0.80 1.00 1.20 (3°)
E
1.45 1.50 1.65
P K F
1.80 2.00 2.20
G
5.45 BSC
H
1.20 1.40 1.60
J
0.55 0.60 0.75
1 2 3 K
19.80 20.00 20.20
H L
18.50 18.70 18.90
F 3X D P
3.30 3.50 3.70
Q
3.10 3.20 3.50 0.25
W
M A B S
J U
5.00 REF
G W
2.80 3.00 3.20
G GENERIC MARKING DIAGRAM*
STYLE 1: STYLE 2: STYLE 3: PIN 1. BASE PIN 1. ANODE PIN 1. GATE 2. COLLECTOR 2. CATHODE 2. DRAIN 3. EMITTER 3. ANODE 3. SOURCE 4. COLLECTOR 4. CATHODE 4. DRAIN xxxxxG AYWW xxxxx = Specific Device Code G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G”, may or not be present.
DOCUMENT NUMBER: 98AON25095D
Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DESCRIPTION: TO−3P−3LD PAGE 1 OF 1
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