Datasheet FKPF12N60 (Fairchild) - 2
| Manufacturer | Fairchild |
| Description | Bi-Directional Triode Thyristor Planar Silicon |
| Pages / Page | 7 / 2 — FKPF12N60 / FKPF12N80. Electrical Characteristics. Symbol. Parameter. … |
| File Format / Size | PDF / 144 Kb |
| Document Language | English |
FKPF12N60 / FKPF12N80. Electrical Characteristics. Symbol. Parameter. Test Condition. Min. Typ. Max. Units. Notes:. VDRM
Model Line for this Datasheet
Text Version of Document
FKPF12N60 / FKPF12N80 Electrical Characteristics
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
IDRM Repetieive Peak Off-State Current VDRM applied - - 20 µA VTM On-State Voltage TC=25°C, ITM=17A - - 1.5 V Instantaneous measurement I T2(+), Gate (+) - - 1.5 V V Gate Trigger Voltage (Note 2) V GT II D=6V, RL=6Ω, T2(+), Gate (-) - - 1.5 V RG=330Ω III T2(-), Gate (-) - - 1.5 V I T2(+), Gate (+) - - 30 mA I Gate Trigger Current (Note 2) V GT II D=6V, RL=6Ω, T2(+), Gate (-) - - 30 mA RG=330Ω III T2(-), Gate (-) - - 30 mA VGD Gate Non-Trigger Voltage TJ=125°C, VD=1/2VDRM 0.2 - - V IH Holding Current VD = 12V, ITM = 1A 50 mA IL Latching Current I, III VD = 12V, IG = 1.2IGT 50 mA II 70 mA dv/dt Critical Rate of Rise of VDRM = Rated, Tj = 125°C, 300 V/µs Off-State Voltag Exponential Rise (dv/dt)C Critical-Rate of Rise of Off-State 10 - - V/µs Commutating Voltage (Note 3)
Notes:
1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W
VDRM Commutating voltage and current waveforms Test Condition (V) (inductive load)
FKPF12N60 1. Junction Temperature Supply Voltage Time TJ=125°C (di/dt) 2. Rate of decay of on-state C commutating current Main Current Time (di/dt)C = - 6.0A/ms 3. Peak off-state voltage FKPF12N80 Main Voltage Time VD = 400V (dv/dt)C VD
Quadrant Definitions for a Triac
T2 Positive + (+) T2 (+) T2
Quadrant II
(+) I (+) I GT GT
Quadrant I
GATE GATE T1 T1 IGT - + IGT (+) T2 (+) T2
Quadrant III
(+) I (+) I GT GT
Quadrant IV
GATE GATE T1 T1 - T2 Negative ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002
TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
IDRM Repetieive Peak Off-State Current VDRM applied - - 20 µA VTM On-State Voltage TC=25°C, ITM=17A - - 1.5 V Instantaneous measurement I T2(+), Gate (+) - - 1.5 V V Gate Trigger Voltage (Note 2) V GT II D=6V, RL=6Ω, T2(+), Gate (-) - - 1.5 V RG=330Ω III T2(-), Gate (-) - - 1.5 V I T2(+), Gate (+) - - 30 mA I Gate Trigger Current (Note 2) V GT II D=6V, RL=6Ω, T2(+), Gate (-) - - 30 mA RG=330Ω III T2(-), Gate (-) - - 30 mA VGD Gate Non-Trigger Voltage TJ=125°C, VD=1/2VDRM 0.2 - - V IH Holding Current VD = 12V, ITM = 1A 50 mA IL Latching Current I, III VD = 12V, IG = 1.2IGT 50 mA II 70 mA dv/dt Critical Rate of Rise of VDRM = Rated, Tj = 125°C, 300 V/µs Off-State Voltag Exponential Rise (dv/dt)C Critical-Rate of Rise of Off-State 10 - - V/µs Commutating Voltage (Note 3)
Notes:
1. Gate Open 2. Measurement using the gate trigger characteristics measurement circuit 3. The critical-rate of rise of the off-state commutating voltage is shown in the table below 4. The contact thermal resistance RTH(c-f) in case of greasing is 0.5 °C/W
VDRM Commutating voltage and current waveforms Test Condition (V) (inductive load)
FKPF12N60 1. Junction Temperature Supply Voltage Time TJ=125°C (di/dt) 2. Rate of decay of on-state C commutating current Main Current Time (di/dt)C = - 6.0A/ms 3. Peak off-state voltage FKPF12N80 Main Voltage Time VD = 400V (dv/dt)C VD
Quadrant Definitions for a Triac
T2 Positive + (+) T2 (+) T2
Quadrant II
(+) I (+) I GT GT
Quadrant I
GATE GATE T1 T1 IGT - + IGT (+) T2 (+) T2
Quadrant III
(+) I (+) I GT GT
Quadrant IV
GATE GATE T1 T1 - T2 Negative ©2002 Fairchild Semiconductor Corporation Rev. A1, December 2002