Datasheet DMP10H400SK3 (Diodes) - 4

DMP10H400SK3
0.50 ) 2.5 ( ) 0.45 E V( C N E 0.40 A G T A S T 2.0 I V = -4.5V GS L S 0.35 O -I = 1mA E I = -5A D V D
T
R- D 0.30 N L
C
O O V = -10V H
U
E 0.25 GS S 1.5 -I = 250µA C D I = -10A E
D
R D R U H
O
0.20 O T S
R
- E N 0.15 T
P
I A A G R 1.0 , D 0.10 )
W
, H ) T(
E
n o S ( 0.05 G S V
N
DR 0 0.5 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE ( C ) T , AMBIENT TEMPERATURE (°C) J A Fig. 7 On-Resistance Variation with Temperature Fig. 8 Gate Threshold Variation vs. Ambient Temperature 10 10,000 f = 1MHz 9 ) F 8 p( ) A E ( C T 7 N N A 1,000 Ciss E TI R 6 C R T = 150 C A A U P C 5 A C E T = 125 C C A N R 4 OI U T = 85 C T O A C 100 S 3 N , U C I S T = 25C oss - A J , 2 T T = -55 C C A C 1 rss 0 10 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 -V , SOURCE-DRAIN VOLTAGE (V) -V , DRAIN-SOURCE VOLTAGE (V) SD DS Fig. 9 Diode Forward Voltage vs. Current Fig. 10 Typical Junction Capacitance 10 9 ) V( 8 E G A 7 T L O V = -60V DS V 6 I = -5A D E C R 5 U O S 4 - E T A 3 G , S 2 GV- 1 0 0 2 4 6 8 10 12 14 16 18 Q , TOTAL GATE CHARGE (nC) g Fig. 11 Gate-Charge Characteristics DMP10H400SK3 4 of 6 October 2014 Document number: DS35932 Rev. 5 - 2
www.diodes.com
© Diodes Incorporated