Datasheet DMHC4035LSDQ (Diodes) - 7

DMHC4035LSDQ
0.15 ) 2 ( ) E ) V C ( V 1.8 N E A 0.12 GE T G SI TA S L T A L 1.6 E V = -5V GS O O R V V - I = -5A D 0.09 -I = 250µA D D
T
N O L D 1.4 O OL
C N
E H S
U OI
C R V = -10V -I =1mA E D GS E S H
D T
U 0.06 R 1.2 I = -10A O D
O A
S TH - T H R E
R
N
MT
I T E T A A 1 A
P
R G G
RC
0.03 ,
U
D , ) H)
W O
T
D
n o ( 0.8 ( T H S (
E F
S G GS
O
D V V-
N NI
R
R
0-50 -25 0 25 50 75 100 125 150 0.6
EP
-50 -25 0 25 50 75 100 125 150 T , JUNCTION TEMPERATURE (C) J T , AMBIENT TEMPERATURE (°C)
C
Figure 19 On-Resistance Variation with Temperature A Figure 20 Gate Threshold Variation vs. Ambient Temperature
NW AE
15 1000
VN
Ciss
D
)
A
F p ) 12 ( A( E C T N N E A T R 9 I R C U A P C T = 85 C A A 100 E C C oss C N R 6 O U T = 125 C T = 25 C A A I O T S C C , N rss I S U - T = 150 C A J 3 , T = -55 C A TC 0 10 0 0.3 0.6 0.9 1.2 1.5 0 5 10 15 20 25 30 35 40 -V , SOURCE-DRAIN VOLTAGE (V) -V , DRAIN-SOURCE VOLTAGE (V) SD DS Figure 21 Diode Forward Voltage vs. Current Figure 22 Typical Junction Capacitance 10 100 ) V( E 8 G ) 10 A A T ( L T O N V 6 E E R C R DC R U V = -20V 1 P = 10s U DS C W O I = -4.2A D N P = 1s S I W - 4 A E P = 100ms R W T A D P = 10ms , W G D , I- 0.1 T = 150癈 P = 1ms 150°C W S J(max) G 2 T = 2 25癈 P = 100祍 °C W 100µs V A - V = -4.5V GS Single Pulse DUT on 1 * MRP Board 0.01 0 0 2 4 6 8 10 12 0.1 1 10 100 Q , TOTAL GATE CHARGE (nC) -V , DRAIN-SOURCE VOLTAGE (V) DS g Figure 23 Gate-Charge Characteristics Figure 24 SOA, Safe Operation Area DMHC4035LSDQ 7 of 9 March 2018 Document number: DS37219 Rev. 2 - 2
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