Datasheet SI7489DP (Vishay) - 4
| Manufacturer | Vishay |
| Description | P-Channel 100-V (D-S) MOSFET |
| Pages / Page | 13 / 4 — Si7489DP. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. … |
| File Format / Size | PDF / 309 Kb |
| Document Language | English |
Si7489DP. TYPICAL CHARACTERISTICS. Source-Drain Diode Forward Voltage. On-Resistance vs. Gate-to-Source Voltage
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Text Version of Document
Si7489DP
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 40 0.08 ) Ω ID = 7.8 A 0.07 T T J = 150 °C A = 125 °C 0.06 10 0.05 - Source Current (A) 0.04 T ain-to-Source On-Resistance ( A = 25 °C SI TJ = 25 °C - Dr 0.03 DS(on)R 1 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
2.4 35 2.2 30 2.0 ID = 250 µA 25 1.8 (V) 20 ) h (t 1.6 er (W) w GS o V P 15 1.4 10 1.2 1.0 5 0.8 0 - 50 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 T Time (s) J - Temperature (°C)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
100 Limited by 100 µs 10 RDS(on)* 1 ms 10 ms 1 100 ms 1 s ain Current (A) 0.1 - Dr 10 s I D DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com Document Number: 73436 4 S09-0271-Rev. C, 16-Feb-09
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted 40 0.08 ) Ω ID = 7.8 A 0.07 T T J = 150 °C A = 125 °C 0.06 10 0.05 - Source Current (A) 0.04 T ain-to-Source On-Resistance ( A = 25 °C SI TJ = 25 °C - Dr 0.03 DS(on)R 1 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 2 3 4 5 6 7 8 9 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
2.4 35 2.2 30 2.0 ID = 250 µA 25 1.8 (V) 20 ) h (t 1.6 er (W) w GS o V P 15 1.4 10 1.2 1.0 5 0.8 0 - 50 - 25 0 25 50 75 100 125 150 175 0.01 0.1 1 10 100 1000 T Time (s) J - Temperature (°C)
Threshold Voltage Single Pulse Power, Junction-to-Ambient
100 Limited by 100 µs 10 RDS(on)* 1 ms 10 ms 1 100 ms 1 s ain Current (A) 0.1 - Dr 10 s I D DC 0.01 TA = 25 °C Single Pulse 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com Document Number: 73436 4 S09-0271-Rev. C, 16-Feb-09