Datasheet DXTN80060DFG (Diodes) - 4
| Manufacturer | Diodes |
| Description | NPN, 60V, 6.5A, PowerDI3333-8 |
| Pages / Page | 8 / 4 — DXTN80060DFG. Electrical Characteristics. Characteristic. Symbol. Min. … |
| File Format / Size | PDF / 538 Kb |
| Document Language | English |
DXTN80060DFG. Electrical Characteristics. Characteristic. Symbol. Min. Typ. Max. Unit. Test Condition. Fig 6. Timing Waveform
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DXTN80060DFG Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 100 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 60 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA VCB = 100V Collector Cutoff Current ICBO — — 10 µA VCB = 100V, TA = +125°C Collector Cutoff Current ICES — — 300 nA VCE = 48V Emitter Cutoff Current IEBO — — 50 nA VEB = 7V — 50 — mV IC = 100mA, IB = 1mA — 45 80 mV IC = 1A, IB = 20mA — 22 40 mV IC = 1A, IB = 100mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — 70 120 mV IC = 2A, IB = 40mA — 75 130 mV IC = 4A, IB = 200mA — 100 200 mV IC = 6.5A, IB = 650mA — 880 1,000 mV IC = 4A, IB = 200mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 980 1,100 mV IC = 6.5A, IB = 650mA — 750 850 mV IC = 4A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 800 950 mV IC = 6.5A, VCE = 2V 250 370 — — IC = 10mA, VCE = 2V 300 370 550 — IC = 100mA, VCE = 2V 260 350 — — IC = 1A, VCE = 2V DC Current Gain (Note 10) hFE 250 335 — — IC = 2A, VCE = 2V 140 250 — — IC = 4A, VCE = 2V 35 110 — — IC = 6.5A, VCE = 2V Input Capacitance Cibo — 620 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 30 — pF VCB = 10V, f = 1MHz V Current Gain-Bandwidth Product f CE = 10V, IC = 100mA T 100 140 — MHz f = 50MHz td — 14 — ns Turn-On Time tr — 80 — ns VCC = 10V, IC = 4A ts — 375 — ns IB1 = -IB2 = 400mA Turn-Off Time tf — 28 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN80060DFG 4 of 8 August 2025 Document number: DS46854 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO 100 — — V IC = 100µA Collector-Emitter Breakdown Voltage (Note 10) BVCEO 60 — — V IC = 10mA Emitter-Collector Breakdown Voltage BVECO 5 — — V IE = 100µA Emitter-Base Breakdown Voltage BVEBO 8 — — V IE = 100µA — — 100 nA VCB = 100V Collector Cutoff Current ICBO — — 10 µA VCB = 100V, TA = +125°C Collector Cutoff Current ICES — — 300 nA VCE = 48V Emitter Cutoff Current IEBO — — 50 nA VEB = 7V — 50 — mV IC = 100mA, IB = 1mA — 45 80 mV IC = 1A, IB = 20mA — 22 40 mV IC = 1A, IB = 100mA Collector-Emitter Saturation Voltage (Note 10) VCE(sat) — 70 120 mV IC = 2A, IB = 40mA — 75 130 mV IC = 4A, IB = 200mA — 100 200 mV IC = 6.5A, IB = 650mA — 880 1,000 mV IC = 4A, IB = 200mA Base-Emitter Saturation Voltage (Note 10) VBE(sat) — 980 1,100 mV IC = 6.5A, IB = 650mA — 750 850 mV IC = 4A, VCE = 2V Base-Emitter Turn-On Voltage (Note 10) VBE(on) — 800 950 mV IC = 6.5A, VCE = 2V 250 370 — — IC = 10mA, VCE = 2V 300 370 550 — IC = 100mA, VCE = 2V 260 350 — — IC = 1A, VCE = 2V DC Current Gain (Note 10) hFE 250 335 — — IC = 2A, VCE = 2V 140 250 — — IC = 4A, VCE = 2V 35 110 — — IC = 6.5A, VCE = 2V Input Capacitance Cibo — 620 — pF VEB = 0.5V, f = 1MHz Output Capacitance Cobo — 30 — pF VCB = 10V, f = 1MHz V Current Gain-Bandwidth Product f CE = 10V, IC = 100mA T 100 140 — MHz f = 50MHz td — 14 — ns Turn-On Time tr — 80 — ns VCC = 10V, IC = 4A ts — 375 — ns IB1 = -IB2 = 400mA Turn-Off Time tf — 28 — ns Note: 10. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Fig 6. Timing Waveform
DXTN80060DFG 4 of 8 August 2025 Document number: DS46854 Rev. 2 - 2
www.diodes.com
© 2025 Copyright Diodes Incorporated. All Rights Reserved.