Datasheet EPC2218 (Efficient Power Conversion)
| Manufacturer | Efficient Power Conversion |
| Description | 100 V, 231 A Enhancement-Mode GaN Power Transistor |
| Pages / Page | 7 / 1 — eGaN® FET DATASHEET. EPC2218 – Enhancement Mode Power Transistor. HAL. … |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
eGaN® FET DATASHEET. EPC2218 – Enhancement Mode Power Transistor. HAL. Revised February 20, 2026. Application Notes:. Questions:
Model Line for this Datasheet
Text Version of Document
eGaN® FET DATASHEET
EPC2218
EPC2218 – Enhancement Mode Power Transistor
VDS , 100 V
D
RDS(on) , 3.2 mΩ max
G
ID , 60 A
HAL S Revised February 20, 2026
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Application Notes: Questions:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, OFF = 0 V
Ask a GaN
(negative voltage not needed)
Expert
Die Size: 3.5 x 1.95 mm • Top of FET is electrically connected to source
EPC2218
eGaN® FETs are supplied only in
Maximum Ratings
passivated die form with solder bars.
PARAMETER VALUE UNIT Applications
VDS Drain-to-Source Voltage (Continuous) 100 V • DC-DC converters VDS (tr) Drain-to-Source Voltage (Repetitive Transient)(1) 120 Continuous (T • BLDC motor drives A = 25°C) 60 ID Pulsed (25°C, TPULSE = 10 µs) 309 A • Sync rectification for AC/DC and DC-DC Pulsed (125°C, TPULSE = 10 µs) 247 • Point of load converters Gate-to-Source Voltage 6 V V • USB-C GS Gate-to-Source Voltage -4 • Lidar TJ Operating Temperature -40 to 150 °C • Class D audio TSTG Storage Temperature -40 to 150 (1) • LED lighting Pulsed repetitively, duty cycle factor (DCFactor) ≤ 1%; See Figure 13 and
Reliability Report Phase 16
, Section 3.2.6 • eMobility
Benefits Thermal Characteristics
• Ultra high efficiency
PARAMETER TYP UNIT
• No reverse recovery RθJC Thermal Resistance, Junction-to-Case 0.5 • Ultra low Q R °C/W G θJB Thermal Resistance, Junction-to-Board 1.4 • Small footprint RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 53 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Scan QR code or click link below for more BV information including reliability reports, DSS Drain-to-Source Voltage VGS = 0 V, ID = 0.4 mA 100 V device models, demo boards! IDSS Drain-Source Leakage VGS = 0 V, VDS = 80 V 0.08 0.35 Gate-to-Source Forward Leakage VGS = 5 V 0.02 2.3 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.6 9 Gate-to-Source Reverse Leakage VGS = -4 V 0.06 0.4 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 7 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 25 A 2.4 3.2 mΩ VSD Source-Drain Forward Voltage# VGS = 0 V, IS = 0.5 A 1.5 V # Defined by design. Not subject to production test.
https://l.ead.me/EPC2218
All measurements were done with substrate connected to source. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information:
info@epc-co.com
| 1
EPC2218
EPC2218 – Enhancement Mode Power Transistor
VDS , 100 V
D
RDS(on) , 3.2 mΩ max
G
ID , 60 A
HAL S Revised February 20, 2026
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Application Notes: Questions:
• Easy-to-use and reliable gate, Gate Drive ON = 5 V typical, OFF = 0 V
Ask a GaN
(negative voltage not needed)
Expert
Die Size: 3.5 x 1.95 mm • Top of FET is electrically connected to source
EPC2218
eGaN® FETs are supplied only in
Maximum Ratings
passivated die form with solder bars.
PARAMETER VALUE UNIT Applications
VDS Drain-to-Source Voltage (Continuous) 100 V • DC-DC converters VDS (tr) Drain-to-Source Voltage (Repetitive Transient)(1) 120 Continuous (T • BLDC motor drives A = 25°C) 60 ID Pulsed (25°C, TPULSE = 10 µs) 309 A • Sync rectification for AC/DC and DC-DC Pulsed (125°C, TPULSE = 10 µs) 247 • Point of load converters Gate-to-Source Voltage 6 V V • USB-C GS Gate-to-Source Voltage -4 • Lidar TJ Operating Temperature -40 to 150 °C • Class D audio TSTG Storage Temperature -40 to 150 (1) • LED lighting Pulsed repetitively, duty cycle factor (DCFactor) ≤ 1%; See Figure 13 and
Reliability Report Phase 16
, Section 3.2.6 • eMobility
Benefits Thermal Characteristics
• Ultra high efficiency
PARAMETER TYP UNIT
• No reverse recovery RθJC Thermal Resistance, Junction-to-Case 0.5 • Ultra low Q R °C/W G θJB Thermal Resistance, Junction-to-Board 1.4 • Small footprint RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 53 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Scan QR code or click link below for more BV information including reliability reports, DSS Drain-to-Source Voltage VGS = 0 V, ID = 0.4 mA 100 V device models, demo boards! IDSS Drain-Source Leakage VGS = 0 V, VDS = 80 V 0.08 0.35 Gate-to-Source Forward Leakage VGS = 5 V 0.02 2.3 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.6 9 Gate-to-Source Reverse Leakage VGS = -4 V 0.06 0.4 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 7 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 25 A 2.4 3.2 mΩ VSD Source-Drain Forward Voltage# VGS = 0 V, IS = 0.5 A 1.5 V # Defined by design. Not subject to production test.
https://l.ead.me/EPC2218
All measurements were done with substrate connected to source. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information:
info@epc-co.com
| 1