Datasheet EPC2218 (Efficient Power Conversion) - 2
| Manufacturer | Efficient Power Conversion |
| Description | 100 V, 231 A Enhancement-Mode GaN Power Transistor |
| Pages / Page | 7 / 2 — eGaN® FET DATASHEET. Dynamic Characteristics# (TJ = 25°C unless otherwise … |
| File Format / Size | PDF / 1.3 Mb |
| Document Language | English |
eGaN® FET DATASHEET. Dynamic Characteristics# (TJ = 25°C unless otherwise stated). PARAMETER. TEST CONDITIONS. MIN. TYP. MAX. UNIT
Model Line for this Datasheet
Text Version of Document
eGaN® FET DATASHEET
EPC2218
Dynamic Characteristics# (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance 1189 1570 CRSS Reverse Transfer Capacitance VGS = 0 V, VDS = 50 V 4.3 COSS Output Capacitance 562 843 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 2) 740 VGS = 0 V, VDS = 0 to 50 V COSS(TR) Effective Output Capacitance, Time Related (Note 3) 925 RG Gate Resistance 0.4 Ω QG Total Gate Charge VGS = 5 V, VDS = 50 V, ID = 25 A 10.5 13.6 QGS Gate-to-Source Charge 3.2 QGD Gate-to-Drain Charge VDS = 50 V, ID = 25 A 1.5 nC QG(TH) Gate Charge at Threshold 1.9 QOSS Output Charge VGS = 0 V, VDS = 50 V 46 69 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. All measurements were done with substrate connected to source. Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
Figure 1: Typical Output Characteristics at 25°C* Figure 2: Typical Transfer Characteristics*
300 300 VGS = 5 V V 25˚C 250 GS = 4 V V 250 GS = 3 V 125˚C VGS = 2 V VDS = 3 V DS 200 200 150 150
– Drain Current (A) – Drain Current (A)
100
I D I D
100 50 50 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Figure 3: Typical RDS(on) vs. VGS for Various Drain Currents Figure 4: Typical RDS(on) vs. VGS for Various Temperatures ) Ω
25˚C 8 ID = 12 A 8 125˚C ID = 25 A VI = 25 A I
ance (m
DS D = 3 V D = 37 A 6 ID = 50 A 6
ce Resist ur So
4
to-
4
– Drain-to-Source Resistance (mΩ) – Drain-
2 2
R DS(on) R DS(on)
0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
* Generated based on a pulse width of 300 µs. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information:
info@epc-co.com
| 2
EPC2218
Dynamic Characteristics# (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance 1189 1570 CRSS Reverse Transfer Capacitance VGS = 0 V, VDS = 50 V 4.3 COSS Output Capacitance 562 843 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 2) 740 VGS = 0 V, VDS = 0 to 50 V COSS(TR) Effective Output Capacitance, Time Related (Note 3) 925 RG Gate Resistance 0.4 Ω QG Total Gate Charge VGS = 5 V, VDS = 50 V, ID = 25 A 10.5 13.6 QGS Gate-to-Source Charge 3.2 QGD Gate-to-Drain Charge VDS = 50 V, ID = 25 A 1.5 nC QG(TH) Gate Charge at Threshold 1.9 QOSS Output Charge VGS = 0 V, VDS = 50 V 46 69 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. All measurements were done with substrate connected to source. Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
Figure 1: Typical Output Characteristics at 25°C* Figure 2: Typical Transfer Characteristics*
300 300 VGS = 5 V V 25˚C 250 GS = 4 V V 250 GS = 3 V 125˚C VGS = 2 V VDS = 3 V DS 200 200 150 150
– Drain Current (A) – Drain Current (A)
100
I D I D
100 50 50 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) Figure 3: Typical RDS(on) vs. VGS for Various Drain Currents Figure 4: Typical RDS(on) vs. VGS for Various Temperatures ) Ω
25˚C 8 ID = 12 A 8 125˚C ID = 25 A VI = 25 A I
ance (m
DS D = 3 V D = 37 A 6 ID = 50 A 6
ce Resist ur So
4
to-
4
– Drain-to-Source Resistance (mΩ) – Drain-
2 2
R DS(on) R DS(on)
0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
* Generated based on a pulse width of 300 µs. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information:
info@epc-co.com
| 2