Datasheet ZVNL110A (Diodes)
| Manufacturer | Diodes |
| Description | N-Channel Enhancement Mode Vertical DMOS FET in E-Line package |
| Pages / Page | 1 / 1 — N-CHANNEL ENHANCEMENT. MODE VERTICAL DMOS FET. ZVNL110A. ISSUE 2 – MARCH … |
| File Format / Size | PDF / 28 Kb |
| Document Language | English |
N-CHANNEL ENHANCEMENT. MODE VERTICAL DMOS FET. ZVNL110A. ISSUE 2 – MARCH 94. E-Line. TO92 Compatible. ABSOLUTE MAXIMUM RATINGS
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Text Version of Document
N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ZVNL110A ISSUE 2 – MARCH 94
FEATURES * 100 Volt VDS * R =3Ω DS(on) * Low threshold voltage D G S
E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 320 mA Pulsed Drain Current IDM 6 A Gate Source Voltage V ± GS 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BVDSS 100 V ID=1mA, VGS=0V Voltage Gate-Source Threshold VGS(th) 0.75 1.5 V ID=1mA, VDS= VGS Voltage Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain I µ DSS 10 A VDS=100 V, VGS=0 Current 500 µA VDS=80 V, VGS=0V, T=125°C (2) On-State Drain Current(1) ID(on) 750 mA VDS=25 V, VGS=5V Static Drain-Source On-State R Ω DS(on) 4.5 VGS=5V,ID=250mA Resistance (1) 3.0 Ω VGS=10V, ID=500mA Forward Transconductance gfs 225 mS VDS=25V,ID=500mA (1)(2) Input Capacitance (2) Ciss 75 pF Common Source Output Coss 25 pF VDS=25 V, VGS=0V, f=1MHz Capacitance (2) Reverse Transfer Capacitance Crss 8 pF (2) Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 12 ns V ≈ DD 25V, VGS=10V, ID=1A Turn-Off Delay Time (2)(3) td(off) 15 ns Fall Time (2)(3) tf 13 ns 3-400
FEATURES * 100 Volt VDS * R =3Ω DS(on) * Low threshold voltage D G S
E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 100 V Continuous Drain Current at Tamb=25°C ID 320 mA Pulsed Drain Current IDM 6 A Gate Source Voltage V ± GS 20 V Power Dissipation at Tamb=25°C Ptot 700 mW Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Drain-Source Breakdown BVDSS 100 V ID=1mA, VGS=0V Voltage Gate-Source Threshold VGS(th) 0.75 1.5 V ID=1mA, VDS= VGS Voltage Gate-Body Leakage IGSS 100 nA VGS=± 20V, VDS=0V Zero Gate Voltage Drain I µ DSS 10 A VDS=100 V, VGS=0 Current 500 µA VDS=80 V, VGS=0V, T=125°C (2) On-State Drain Current(1) ID(on) 750 mA VDS=25 V, VGS=5V Static Drain-Source On-State R Ω DS(on) 4.5 VGS=5V,ID=250mA Resistance (1) 3.0 Ω VGS=10V, ID=500mA Forward Transconductance gfs 225 mS VDS=25V,ID=500mA (1)(2) Input Capacitance (2) Ciss 75 pF Common Source Output Coss 25 pF VDS=25 V, VGS=0V, f=1MHz Capacitance (2) Reverse Transfer Capacitance Crss 8 pF (2) Turn-On Delay Time (2)(3) td(on) 7 ns Rise Time (2)(3) tr 12 ns V ≈ DD 25V, VGS=10V, ID=1A Turn-Off Delay Time (2)(3) td(off) 15 ns Fall Time (2)(3) tf 13 ns 3-400