Datasheet VS-HOT200C080 (Vishay) - 2

VS-HOT200C080
www.vishay.com Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
VGS = 0 V, ID = 250 μA 80 - - Drain to source breakdown voltage V(BR)DSS V VGS = 0 V, ID = 5 mA, TJ = -40 °C 80 - - Static drain to source on-resistance, Q1 (1) RDS(on) Q1 VGS = 10 V, ID = 200 A - 0.45 0.91 mΩ Static drain to source on-resistance, Q2 (1) RDS(on) Q2 VGS = 10 V, ID = 200 A - 0.75 1.21 Static drain to source on-resistance, Q1 RDS(on) Q1 VGS = 10 V, ID = 200 A, TJ = 125 °C - 0.75 - mΩ Static drain to source on-resistance, Q2 RDS(on) Q2 VGS = 10 V, ID = 200 A, TJ = 125 °C - 1.25 - Static drain to source on resistance, - 1.79 2.35 Q1 module level (2) RDSQ1module VGS = 10 V, ID = 200 A mΩ Static drain to source on resistance, Q2 module level (2) RDSQ2module - 1.79 2.35 VDS = VGS, ID = 250 μA 2.3 2.92 4.0 V Gate threshold voltage VGS(th) VDS = VGS, ID = 250 μA, TJ = -40 °C - 3.34 - V Forward transconductance gfs VDS = 20 V, ID = 200 A, VGS = 10 V - 333 - S VDS = 80 V, VGS = 0 V - 0.1 1 Drain to source leakage current IDSS μA VDS = 80 V, VGS = 0 V, TJ = 150 °C - 50 - Internal gate resistance RGint - 1.2 - Ω Gate to source leakage IGSS VGS = ± 20 V - - ± 100 nA Total gate charge Qg - 130 - ID = 80 A, VDS = 48 V, Gate to source charge Qgs - 39 - nC VGS = 0 V / 10 V Gate to drain (“Miller”) charge Qgd - 24 - Turn-on switching energy (3) Eon - 0.42 0.7 mJ Turn-off switching energy (3) Eoff - 2.52 4.0 V Turn-on delay time t DD = 52 V, ID = 250 A, d(on) - 203 - Rgon = 54 Ω, Rgoff = 81 Ω, Rise time tr V - 169 - GS = 0 V / 13 V ns Turn-off delay time td(off) - 1015 - Fall time tf - 256 - Turn-on switching energy Eon - 0.48 - mJ Turn-off switching energy Eoff - 2.28 - T Turn-on delay time t J = 125 °C, VDD = 52 V, ID = 250 A, d(on) - 186 - Rgon = 54 Ω, Rgoff = 69 Ω, Rise time tr V - 175 - GS = 0 V / 13 V ns Turn-off delay time td(off) - 900 - Fall time tf - 227 - Input capacitance Ciss - 11.2 - nF Output capacitance Coss VGS = 0 V, VDS = 40 V, f = 10 kHz - 5.6 - Reverse transfer capacitance Crss - 30 - pF
Notes
(1) The difference in RDS(on) values listed in the table refer to the measurement path available inside the module. Q1 and Q2 MOSFETs have the same die size and technology. (2) Module level RDS(on) values listed in the table refer to the measurement taken on power terminals. High side MOSFET Q1 was measured on terminals 10 to 12, while low side MOSFET Q2 was measured on terminals 12 to 11. (3) Guaranteed by design, not subjected to production test. Revision: 27-Jan-2026
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