Datasheet 1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 (ON Semiconductor) - 2

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1N4001, 1N4002, 1N4003, 1N4004, 1N4005, 1N4006, 1N4007 MAXIMUM RATINGS Rating Symbol 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006 1N4007 Unit
†Peak Repetitive Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Working Peak Reverse Voltage VRWM DC Blocking Voltage VR †Non−Repetitive Peak Reverse Voltage VRSM 60 120 240 480 720 1000 1200 V (halfwave, single phase, 60 Hz) †RMS Reverse Voltage VR(RMS) 35 70 140 280 420 560 700 V †Average Rectified Forward Current IO 1.0 A (single phase, resistive load, 60 Hz, TA = 75°C) †Non−Repetitive Peak Surge Current IFSM 30 (for 1 cycle) A (surge applied at rated load conditions) Operating and Storage Junction TJ −65 to +175 °C Temperature Range Tstg Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. †Indicates JEDEC Registered Data
THERMAL CHARACTERISTICS Rating Symbol Max Unit
Maximum Thermal Resistance, Junction−to−Ambient RqJA Note 1 °C/W
ELECTRICAL CHARACTERISTICS
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Rating Symbol Typ Max Unit
Maximum Instantaneous Forward Voltage Drop, (iF = 1.0 Amp, TJ = 25°C) vF 0.93 1.1 V Maximum Full−Cycle Average Forward Voltage Drop, (IO = 1.0 Amp, TL = 75°C, 1 inch leads) VF(AV) − 0.8 V Maximum Reverse Current (rated DC voltage) IR mA (TJ = 25°C) 0.05 10 (TJ = 100°C) 1.0 50 Maximum Full−Cycle Average Reverse Current, (IO = 1.0 Amp, TL = 75°C, 1 inch leads) IR(AV) − 30 mA †Indicates JEDEC Registered Data
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