Datasheet 1N5817, 1N5818, 1N5819 (Fairchild)
| Manufacturer | Fairchild |
| Description | Schottky Barrier Rectifier |
| Pages / Page | 3 / 1 — 1N5817 - 1N5819 — Scho. 1N5817 - 1N5819 Schottky Barrier Rectifier. … |
| File Format / Size | PDF / 107 Kb |
| Document Language | English |
1N5817 - 1N5819 — Scho. 1N5817 - 1N5819 Schottky Barrier Rectifier. Features. ky Barrier Rectifier. DO-41 plastic case
Text Version of Document
1N5817 - 1N5819 — Scho
November 2010
1N5817 - 1N5819 Schottky Barrier Rectifier Features
• 1.0 ampere operation at TA = 90°C with no thermal runaway.
tt
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
ky Barrier Rectifier DO-41 plastic case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Value Symbol Parameter Units 1N5817 1N5818 1N5819
VRRM Maximum Repetitive Reverse Voltage 20 30 40 V IF(AV) Average Rectified Forward Current 1.0 A .375” lead length @ TA = 90°C IFSM Non-repetitive Peak Surge Current 25 A 8.3 ms Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature -65 to +125 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Symbol Parameter Value Units
PD Power Dissipation 1.25 W RθJA Maximum Thermal Resistance, Junction to Ambient 100 °C/W RθJC Maximum Thermal Resistance, Junction to Case 45 °C/W * Mounted on Cu-pad Size 5mm x 5mm on PCB
Electrical Characteristics
(per diode)
Value Symbol Parameter Units 1N5817 1N5818 1N5819
VF Forward Voltage @ 1.0 A 450 550 600 mV @ 3.0 A 750 875 900 mV IR Reverse Current @ rated VR TC = 25 °C 0.5 mA TC = 100 °C 10 mA CT Total Capacitance 110 pF VR = 4.0 V, f = 1.0 MHz * Pulse Test: Pulse Width=300μs, Duty Cycle=2% © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N5817 - 1N5819 Rev. C2 1
November 2010
1N5817 - 1N5819 Schottky Barrier Rectifier Features
• 1.0 ampere operation at TA = 90°C with no thermal runaway.
tt
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
ky Barrier Rectifier DO-41 plastic case
COLOR BAND DENOTES CATHODE
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
Value Symbol Parameter Units 1N5817 1N5818 1N5819
VRRM Maximum Repetitive Reverse Voltage 20 30 40 V IF(AV) Average Rectified Forward Current 1.0 A .375” lead length @ TA = 90°C IFSM Non-repetitive Peak Surge Current 25 A 8.3 ms Single Half-Sine Wave TJ, TSTG Operating Junction and Storage Temperature -65 to +125 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics Symbol Parameter Value Units
PD Power Dissipation 1.25 W RθJA Maximum Thermal Resistance, Junction to Ambient 100 °C/W RθJC Maximum Thermal Resistance, Junction to Case 45 °C/W * Mounted on Cu-pad Size 5mm x 5mm on PCB
Electrical Characteristics
(per diode)
Value Symbol Parameter Units 1N5817 1N5818 1N5819
VF Forward Voltage @ 1.0 A 450 550 600 mV @ 3.0 A 750 875 900 mV IR Reverse Current @ rated VR TC = 25 °C 0.5 mA TC = 100 °C 10 mA CT Total Capacitance 110 pF VR = 4.0 V, f = 1.0 MHz * Pulse Test: Pulse Width=300μs, Duty Cycle=2% © 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com 1N5817 - 1N5819 Rev. C2 1
