Datasheets - Schottky Diodes & Rectifiers ON Semiconductor
Subsection: "Schottky Diodes & Rectifiers"
Manufacturer: "ON Semiconductor"
Manufacturers
Avago Technologies Broadcom Central Semiconductor Cree Diodes Fairchild First Silicon International Rectifier Kyocera Littelfuse MCC Microsemi Multicomp Nanjing International Group Nexperia NXP ON Semiconductor Panasonic PanJit Rohm STMicroelectronics Taiwan Semiconductor Texas Instruments Thinki Semiconductor Toshiba Vishay WEJ Won-Top Electronics Yangzhou YangjieSeries
1N5817 1N5818 1N5819 1N5820 1N5821 1N5822 MBD301 MBD701 MBR0520L MBR0540T1G MBR0540T3G MBR140SF MBR2030CTL MBR340 MBR350 MBR360 MBRA140 MBRD835L MBRF20100CT MBRM120L MBRS1100 MBRS120 MBRS130 MBRS130LT3G MBRS190 MBRS2040L MBRS240L MBRS320P MBRS330P MBRS340 MBRS340P MBRS540 MMBD301L MMBD701L NCP1421 NRVB140SF NRVBA140N NRVBS130N RB751V40 SB1100 SB120 SB130 SB140 SB150 SB160 SB180 SBRA401N SBRS8130LNSearch results: 48 Output: 1-20
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1.0 A, 80 V, Schottky Diode in DO-41 package- 1.0 A, 60 V, Schottky Diode in DO-41 package
- 1.0 A, 50 V, Schottky Diode in DO-41 package
- 1.0 A, 40 V, Schottky Diode in DO-41 package
- 1.0 A, 30 V, Schottky Diode in DO-41 package
- 1.0 A, 20 V, Schottky Diode in DO-41 package
- 1.0 A, 100 V, Schottky Diode in DO-41 package
- Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V in 403A-03 package The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay ...
- 1.0 A, 40 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- 1.0 A, 40 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- 1.0 A, 40 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Diodes - Rectifiers Single ON Semiconductor MBR360 MBR360RLG
Schottky Diodes & Rectifiers ON Semiconductor MBR360Schottky Barrier Rectifier, 60 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide ... - Diodes - Rectifiers Single ON Semiconductor MBR350 MBR350RLG
Schottky Diodes & Rectifiers ON Semiconductor MBR350Schottky Barrier Rectifier, 50 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide ... - 30 mA, 30 V, Schottky Diode The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for ...
- Schottky Power Rectifier, Surface Mount, 0.5 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current tradeoff. It is ideally suited for low voltage, high ...
- Schottky Power Rectifier, Switch-mode, Dual, 20 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and ...
- Diodes - Rectifiers Single ON Semiconductor MBR340 MBR340RLG
Schottky Diodes & Rectifiers ON Semiconductor MBR340Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ... - Schottky Power Rectifier, Surface Mount, 3.0 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
- Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
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