Datasheets - Schottky Diodes & Rectifiers ON Semiconductor

Subsection: "Schottky Diodes & Rectifiers"
Manufacturer: "ON Semiconductor"
Search results: 40 Output: 1-20

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  1. 1.0 A, 40 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
  2. 1.0 A, 40 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
  1. 1.0 A, 40 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
  2. Schottky Barrier Rectifier, 60 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide ...
  3. Schottky Barrier Rectifier, 50 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features epitaxial construction with oxide ...
  4. 30 mA, 30 V, Schottky Diode The Schottky diode is designed for high speed switching applications, circuit protection and voltage clamping. Extremely low forward voltage reduces conduction loss. The miniature surface mount package is excellent for ...
  5. Schottky Power Rectifier, Surface Mount, 0.5 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop-reverse current tradeoff. It is ideally suited for low voltage, high ...
  6. Schottky Power Rectifier, Switch-mode, Dual, 20 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and ...
  7. Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ...
  8. Schottky Power Rectifier, Surface Mount, 3.0 A, 30 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
  9. Schottky Power Rectifier, Surface Mount, 3.0 A, 20 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
  10. Schottky Power Rectifier, Surface Mount, 3.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction ...
  11. Schottky Power Rectifier, Surface Mount, 2.0 A, 40 V The Schottky Rectifier employs the Schottky Barrier principle in a metal-to-silicon power rectifier. It features epitaxial construction with oxide passivation and metal overlay contact. The ...
  12. 1.0 A, 20 V, Schottky Power Rectifier, Surface Mount The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop-reverse current tradeoff. The advanced ...
  13. 1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
  14. 1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
  15. 1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
  16. 1.0 A, 30 V, Schottky Power Rectifier, Surface Mount The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with ...
  17. Schottky Diode UHF 70V The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications. It is supplied in an inexpensive plastic ...
  18. 70 V Schottky Diode The Schottky diode is designed primarily for high efficiency UHF and VHF detector applications. It is readily adaptable to many other fast switching RF and digital applications. It is supplied in an inexpensive plastic package ...

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