80 V, 500 mA General Purpose Signal Schottky Diode The TMBAT49 is a general purpose metal to silicon diode. This device has integrated protection against excessive voltage such as electrostatic discharges.
Power Rectifier, Ultra-Fast Recovery, 1 A, 200 V The Ultrafast Rectifier is ideally suited for high voltage, high frequency rectification or as free wheeling and protection diodes in surface mount applications, where compact size and weight are ...
Power Rectifier, Ultra-Fast Recovery, 1 A, 200 V The Ultrafast Rectifier is ideally suited for high voltage, high frequency rectification or as free wheeling and protection diodes in surface mount applications, where compact size and weight are ...
Power Rectifier, Ultra-Fast Recovery, 1 A, 200 V The Ultrafast Rectifier is ideally suited for high voltage, high frequency rectification or as free wheeling and protection diodes in surface mount applications, where compact size and weight are ...
Schottky Barrier Rectifier, 40 V, 3.0 A The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier's state-of-the-art geometry features epitaxial construction with oxide ...
High Performance Schottky Rectifier, 15 A The VS-15TQ060.. Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 C junction ...
Schottky Rectifier, 5 A The VS-50SQ.. axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical ...
Schottky Rectifier, 5 A The VS-50SQ.. axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical ...
Schottky Rectifier, 5 A The VS-50SQ.. axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 C junction temperature. Typical ...
600 V, 1 A Low Drop Ultrafast Diode All features Ultrafast switching Reduces switching and conduction losses Low reverse recovery current Low thermal resistance