All Sections Infineon - 2
Manufacturer: "Infineon"
Search results: 2,590 Output: 11-20
- Control Integrated POwer System (CIPOS ) Dual In-Line Intelligent Power Module 3Φ -bridge 600V / 15A Discontinued product 15 Feb 2019. Replacement IKCM15F60GA. The CIPOS module family offers the chance for integrating various power and control ...Nov 16, 2025
- Control Integrated POwer System (CIPOS ) Dual In-Line Intelligent Power Module 3Φ -bridge 600V / 15A Discontinued product 15 Feb 2019. Replacement IKCM15F60GA. The CIPOS module family offers the chance for integrating various power and control ...Nov 16, 2025
- Datasheets Infineon IKCM15F60GAXKMA1
CIPOS Mini 600 V, 15 A three-phase intelligent power module CIPOS Mini 600 V, 15 A three-phase TRENCHSTOP IGBT based intelligent power module with open emitter in DIP 36x21 package. It provides fully featured compact inverter solution along with ...Nov 16, 2025 - CIPOS Mini 600 V, 15 A three-phase intelligent power module CIPOS Mini 600 V, 15 A three-phase TRENCHSTOP IGBT based intelligent power module with open emitter in DIP 36x21 package. It provides fully featured compact inverter solution along with ...Nov 16, 2025
- Datasheets Infineon IKCM15F60GACIPOS Mini 600 V, 15 A three-phase intelligent power module CIPOS Mini 600 V, 15 A three-phase TRENCHSTOP IGBT based intelligent power module with open emitter in DIP 36x21 package. It provides fully featured compact inverter solution along with ...Nov 16, 2025
- Datasheets Infineon IRGPS60B120KDP
Insulated Gate Bipolar Transistor (IGBT) with Ultrafast Soft Recovery Diode in TO-274AA package IGBT NPT 1200 V 105 A 595 W Through Hole SUPER-247 (TO-274AA). Motor Control Co-Pack IGBT. Discontinued product, Obsolete. Replacement: IKQ50N120CT2Oct 29, 2025 - Datasheets Infineon IGB03N120H2
HighSpeed 2-Technology for 1200V in PG-TO263-3-2 Package Obsolete and no longer manufacturedJun 23, 2025 - Datasheets Infineon IGB110S101XTMA1The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...Apr 23, 2025
- The IGB110S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x3 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...Apr 23, 2025
- Datasheets Infineon IGC033S101XTMA1The IGC033S101 is a 100 V normally-off e-mode power transistor housed in a small PQFN 3x5 package, enabling high power density designs. Thanks to its low on-state resistance, it is the ideal choice for reliable performance in demanding high-voltage ...Apr 23, 2025
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