Extending the range of Trench 6 MOSFETs with nineteen new devices at 25V, 30V, 40V and 80V, NXP Semiconductors offers designers simplified thermal management and enhanced current capability in the TO-220 package and Power SO-8 LFPAK (Loss Free Package).
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Delivering significant improvements in performance and efficiency for a variety of applications, NXP’s Trench 6 MOSFETS present lower on-resistance and lower switching losses due to their low gate charge and low reverse recovery. Both packages deliver high-current capability, high operating efficiencies, high power density, lower power dissipation and faster switching speed to support higher frequencies. Boardspace savings are also achieved by allowing use of smaller inductors and capacitors.
|
Package |
Part Number |
VDS |
RDS(ON) (typ) |
RDS(ON) (max) |
|
LFPAK |
PSMN1R2-25YL |
25V |
0.9 |
1.2 |
|
PSMN1R5-25YL |
1.13 |
1.5 |
||
|
PSMN1R3-30YL |
30V |
1.06 |
1.3 |
|
|
PSMN1R7-30YL |
1.29 |
1.7 |
||
|
PSMN2R0-30YL |
1.55 |
2 |
||
|
PSMN2R5-30YL |
1.79 |
2.4 |
||
|
PSMN3R0-30YL |
2.19 |
3 |
||
|
PSMN3R5-30YL |
2.43 |
3.5 |
||
|
PSMN4R0-30YL |
2.72 |
4 |
||
|
PSMN5R0-30YL |
3.63 |
5 |
||
|
PSMN6R0-30YL |
4.26 |
6 |
||
|
PSMN7R0-30YL |
4.92 |
7 |
||
|
PSMN9R0-30YL |
6.16 |
8 |
||
|
PSMN2R6-40YS |
40V |
2.17 |
2.75 |
|
|
PSMN4R0-40YS |
3.28 |
4.18 |
||
|
PSMN8R3-40YS |
6.79 |
8.58 |
||
|
PSMN8R2-80YS |
80V |
6.61 |
8.47 |
|
|
PSMN013-80YS |
10 |
12.84 |
||
|
PSMN026-80YS |
21.5 |
27.54 |
||
|
TO220 |
PSMN1R6-30PL |
30V |
1.4 |
1.7 |
|
PSMN2R0-30PL |
1.7 |
2.1 |
||
|
PSMN4R3-30PL |
3.5 |
4.3 |
||
|
PSMN2R2-40PS |
40V |
1.75 |
2.1 |
|
|
PSMN4R5-40PS |
3.9 |
4.6 |
||
|
PSMN8R0-40PS |
6.2 |
7.6 |
||
|
PSMN4R4-80PS |
80V |
3.3 |
4.1 |
|
|
PSMN5R0-80PS |
3.7 |
4.7 |
||
|
PSMN012-80PS |
9 |
11 |
||
|
PSMN050-80PS |
37 |
46 |
||
|
New devices are highlighted in red L = Logic-level S = Standard-level |
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