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  1. Ideal for applications that demand improved reliability and thermal management Littelfuse introduced four new series of 1200 V silicon carbide (SiC) Schottky Diodes from its GEN2 product family, which was originally released in May 2017. The ...
    Discretes · Power » Littelfuse » LSIC2SD120A08, LSIC2SD120A15, LSIC2SD120A20, LSIC2SD120C08
    16-01-2018
  2. Device Features Maximum On-Resistance of 0.58 mΩ at 10 V and Low Gate Charge of 61 nC in Compact PowerPAK® SO-8 Single Package Vishay Intertechnology introduced a new 25 V n-channel TrenchFET® Gen IV power MOSFET that features the ...
    Discretes · Supply · Power » Vishay » SiRA20DP
    27-11-2017
  3. N-channel U-MOS-IX-H MOSFET with integrated SRD is ideal for power supplies and motor drives Toshiba Electronics Europe has expanded its line-up of MOSFETs based on its latest generation U-MOS-IX-H trench semiconductor process with a new, ...
    Discretes » Toshiba » TPH1R204PB
    21-11-2017
  4. Robust, versatile solution for USB PD load switch applications with extended input voltage range Alpha and Omega Semiconductor (AOS) introduced AONR21357, the initial product in this P-Channel family. The new AONR21357 uses the improved P-Channel ...
    Discretes · Power » Alpha & Omega » AONR21357
    24-10-2017
  5. 40 V and 60 V U-MOS-IX-H series in DPAK package offer extremely low R DS(ON) down to 3.1 mΩ Toshiba Electronics Europe has announced new 40 V and 60 V power MOSFETs based on the company’s latest generation U-MOS-IX-H trench ...
    Discretes · Power » Toshiba » TK3R1P04PL, TK4R4P06PL, TK6R7P06PL
    23-10-2017
  6. Combines ultra-low switching losses, high efficiency and superior robustness, even at high temperatures Littelfuse , Inc. introduced its first series of silicon carbide (SiC) MOSFETs, the latest addition to the company’s growing power ...
    Discretes · Power » Littelfuse » LSIC1MO120E0080
    04-10-2017
  7. 20 A, 35 A, and 40 A Devices Feature Low 1.3 mm Profile and Forward Voltage Drop Down to 0.44 V Vishay Intertechnology introduced a new family of surface-mount TMBS® Trench MOS Barrier Schottky rectifiers in the eSMP ® series SlimDPAK ...
    Discretes · Power » Vishay » eSMP
    03-10-2017
  8. Bourns , Inc. announced a new series of bridge rectifier diode products designed for converting alternating current (AC) to direct current (DC) in power applications. Designated Bourns® Model CDTO269-BR1xL , this new series of surface mount ...
    Discretes » Bourns » CDTO269-BR1xL
    19-09-2017
  9. IHLP-1616BZ-0H Devices Feature High Frequency Performance Up to 10 MHz with Lowest Losses of Any Composite Inductor at 1 MHz and Above Vishay Intertechnology introduced the first extended-frequency inductor in the low profile, high current ...
    Discretes · Supply » Vishay » IHLP-1616BZ-0H
    18-09-2017
  10. SSDI is proud to release its latest silicon carbide (SiC) Schottky rectifiers, the SSR15C120D1 series. These 15 amp, 500 1200 volt devices replace the SSR05C100 series and offer higher output current, reverse voltage, and peak surge current (30 A) ...
    Discretes · Power » SSDI » SSR15C120D1
    14-09-2017
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