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  1. For Notebook Computer and Mobile Devices, Rectifiers Provide Current Ratings of 30 A to 40 A in TO-220AB Package Vishay Intertechnology introduced four new 100 V and 120 V TMBS® Trench MOS Barrier Schottky rectifiers that provide up to 20 mV ...
    Discretes · Power » Vishay » V30100CI, V30120CI, V40100CI, V40120CI
    16-10-2018
  2. Ensures no compromise between protection and operating efficiency Nexperia introduced the latest addition to its NextPower Live linear-mode MOSFET family, PSMN3R7-100BSE delivers a best-in-class combination of strong Safe Operating Area (SOA) and ...
    Discretes · Power » Nexperia » PSMN3R7-100BSE
    08-10-2018
  3. Enables high-frequency, high-efficiency power control applications such as electric and hybrid vehicles, datacenters, and auxiliary power supplies Littelfuse introduced its first 1700 V SiC MOSFET, the LSIC1MO170E1000 , expanding its portfolio of ...
    Discretes · Power » Littelfuse » LSIC1MO170E1000
    02-10-2018
  4. Ampleon announced the high power rugged BLF189XRA RF power transistor aimed at broadcast FM radio applications transmitting in the 88 108 MHz frequency range. Operating from an industry standard 50 V power source the BLF189XRA delivers over 1,600 ...
    Discretes » Ampleon » BLF189XRA
    24-09-2018
  5. Lower losses and higher switching deliver highly efficient, space-saving solutions and reduced overall system costs ON Semiconductor has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically ...
    Discretes · Automotive » ON Semiconductor » FFSHx0120, FFSHx065
    19-09-2018
  6. The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 48 V power converters, LiDAR, and LED lighting. ...
    Discretes · Power » EPC » EPC2051
    13-09-2018
  7. New devices increase power supply efficiency even further Toshiba Electronics Europe has launched a new series of next-generation 650 V power MOSFETs that are intended for use in server power supplies in data centers, solar (PV) power conditioners, ...
    Discretes · Power » Toshiba » TK040N65Z
    22-08-2018
  8. Torex Semiconductor has launched the XBP06V0U25R-G as a new series of transient voltage suppressors (TVS). The XBP06V0U25R-G series of products are mounted in close proximity to an external interface to protect downstream ICs from electrostatic ...
    Discretes » Torex » XBP06V0U25R-G
    21-08-2018
  9. Infineon Technologies is launching a new 1200 V IGBT generation TRENCHSTOP™ IGBT6. It is the first discrete IGBT duopack on the market manufactured on 12 inch wafer size. The new IGBT technology is designed to fulfill the increasing customer ...
    07-08-2018
  10. Optimal power efficiency using the latest technology sets a new industry standard for high power density applications Alpha and Omega Semiconductor introduced the AONX38168 , which utilizes the latest 25 V N-Channel MOSFET Technology. The XSPairFET ...
    Discretes · Power » Alpha & Omega » AONX38168
    11-07-2018
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