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Search results: 307   Output: 1-10
  1. Ampleon announced the high power rugged BLF189XRA RF power transistor aimed at broadcast FM radio applications transmitting in the 88 108 MHz frequency range. Operating from an industry standard 50 V power source the BLF189XRA delivers over 1,600 ...
    Discretes » Ampleon » BLF189XRA
  2. Lower losses and higher switching deliver highly efficient, space-saving solutions and reduced overall system costs ON Semiconductor has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically ...
    Discretes · Automotive » ON Semiconductor » FFSHx0120, FFSHx065
  3. The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 48 V power converters, LiDAR, and LED lighting. ...
    Discretes · Power » EPC » EPC2051
  4. New devices increase power supply efficiency even further Toshiba Electronics Europe has launched a new series of next-generation 650 V power MOSFETs that are intended for use in server power supplies in data centers, solar (PV) power conditioners, ...
    Discretes · Power » Toshiba » TK040N65Z
  5. Torex Semiconductor has launched the XBP06V0U25R-G as a new series of transient voltage suppressors (TVS). The XBP06V0U25R-G series of products are mounted in close proximity to an external interface to protect downstream ICs from electrostatic ...
    Discretes » Torex » XBP06V0U25R-G
  6. Infineon Technologies is launching a new 1200 V IGBT generation TRENCHSTOP™ IGBT6. It is the first discrete IGBT duopack on the market manufactured on 12 inch wafer size. The new IGBT technology is designed to fulfill the increasing customer ...
  7. Optimal power efficiency using the latest technology sets a new industry standard for high power density applications Alpha and Omega Semiconductor introduced the AONX38168 , which utilizes the latest 25 V N-Channel MOSFET Technology. The XSPairFET ...
    Discretes · Power » Alpha & Omega » AONX38168
  8. Infineon Technologies expands its product portfolio of the thin-wafer technology TRENCHSTOP™5 IGBT. The new product family is offering up to 40 A 650 V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as ...
  9. Industry’s only available devices compatible with Power-SO8 footprint to meet new standard for battery-powered equipment. Nexperia announced that two of its LFPAK56-packaged portfolio of MOSFETs are now available with improved creepage and ...
    Discretes · Power » Nexperia » PSMN0R9-30ULD, PSMN0R9-40ULD
  10. Reduced on-resistance resulting from the use of a new, small, low-resistance package Toshiba Electronics Europe has released two new MOSFETs housed in the small low-resistance SOP Advance (WF) package in 5 mm × 6 mm size, as new additions to ...
    Discretes · Power » Toshiba » TPHR7904PB, TPH1R104PB
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