News & Press Releases Discretes

Subsection: "Discretes"
Search results: 379 Output: 1-10
  1. Industry-Best FOM AEC-Q101 Device Offered in Compact PowerPAK® SO-8L Package With Gullwing Leads Vishay Intertechnology introduced the world’s best AEC-Q101 qualified p-channel 80 V TrenchFET® MOSFET. With the lowest on-resistance of ...
    09-04-2021
  2. Discretes Power Infineon IPP016N08NF2S IPP019N08NF2S IPP024N08NF2S IPP026N10NF2S IPP040N08NF2S IPP050N10NF2S IPP055N08NF2S IPP082N10NF2S IPP129N10NF2S
    Infineon Technologies has launched StrongIRFET™ 2 the new generation of power MOSFET technology in 80 V and 100 V. Featuring broad availability at distribution partners and excellent price/performance ratio make these right-fit products an ...
    09-03-2021
  3. Discretes Automotive Power Nexperia BUK7V4R2-40H BUK9V13-40H
    Space-saving LFPAK56D half-bridge offers 60% lower parasitic inductance and improved thermal performance for power train, motor control and DC/DC application Nexperia announced a series of half-bridge (high side low side) automotive MOSFETs ...
    01-03-2021
  4. Discretes Power ON Semiconductor NVBG015N065SC1 NTBG015N065SC1 NVH4L015N065SC1 NTH4L015N065SC1
    Superior switching and improved reliability deliver power density improvements in a variety of challenging applications ON Semiconductor has announced a new range of silicon carbide (SiC) MOSFET devices for demanding applications where power ...
    22-02-2021
  1. Discretes Nexperia PUSB3BB2DF PESD5V0C2BDF PESD4V0Z2BCDF
    Best-in-class ESD and system robustness for USB3.2 and HDMI2.1 Nexperia announced three new TrEOS protection devices that provide the most compact method to suppress ESD in USB3.2, HDMI2.1 and other high-speed data lines. The new PUSB3BB2DF , ...
    04-02-2021
  2. Industry-First Device in Compact 5 mm × 6 mm PowerPAK® SO-8L Package With Gullwing Leads Offers On-Resistance Down to 30 mΩ Vishay Intertechnology introduced a new AEC-Q101 qualified p-channel 100 V TrenchFET® MOSFET designed to ...
    13-01-2021
  3. STMicroelectronics’ 800 V 8H Triacs operate at full rated current up to the maximum junction temperature of 150 C, allowing heatsinks in drives for AC loads to be up to 50% smaller to combine compact dimensions with high reliability. Suited ...
    10-01-2021
  4. Discretes Power Alpha & Omega AOTL66518 AOB66518L
    Alpha and Omega Semiconductor announced the release of, AOTL66518 and AOB66518L , a 150 V MOSFET with low on-resistance and a high Safe Operating Area (SOA) capability designed for demanding applications in Telcom Hot Swap. AOS designed these ...
    29-12-2020
  5. Discretes Power Vishay SiHH070N60EF
    Fourth-Generation N-Channel Device Lowers Conduction and Switching Losses, Increases Efficiency Vishay Intertechnology introduced a new device in its fourth generation of 600 V EF Series fast body diode MOSFETs. Providing high efficiency for ...
    07-12-2020
  6. RF Discretes Power Ampleon BLP2425M10S250P
    Ampleon announced the BLP2425M10S250P , a 250 W RF power transistor for solid-state cooking and industrial, scientific and medical (ISM) applications in the 2400 MHz to 2500 MHz frequency band. Using Ampleon’s tenth-generation LDMOS process, ...
    30-11-2020
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