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  1. GaN Systems unveiled the industry’s highest current and power efficient 100 V GaN power transistor, the 100 V, 120 A, 5 mΩ GaN E-HEMT device [GS-010-120-1-T]. It is 1.3X the current rating of GaN Systems’ own 90 A part and ...
    Discretes · Power » GaN Systems » GS-010-120-1-T
    26-04-2018
  2. The EPC2050 offers power systems designers a 350 V, 65 mΩ, 26 A power transistor in an extremely small chip-scale package. These new devices are ideal for applications such as multi-level converters, EV charging, solar power inverters, and ...
    Discretes · Power » EPC » EPC2050
    25-04-2018
  3. New devices combine high efficiency and low noise Toshiba Electronics Europe announced the launch of a new series of 600 V planar MOSFETs known as “π-MOS IX”. The new series is aimed at small to medium switching power supplies such ...
    Discretes · Supply » Toshiba » TK1K9A60F, TK1K2A60F, TK750A60F, TK650A60F
    28-03-2018
  4. GaN Systems made public the 120 A, 650 V GaN E-HEMT, extending its leadership with the industry’s most powerful line of high performance GaN transistors. Power levels continue to rise creating the need for higher operating current. The ...
    Discretes · Power » GaN Systems » GS-065-120-1-D
    13-03-2018
  5. High-performance diodes protect USB and power supply interfaces in mobile devices Toshiba Electronics Europe has announced a new series of TVS diodes that protect USB power lines and power supply connectors used in mobile devices. Toshiba’s ...
    11-03-2018
  6. Optimal power efficiency using latest package technology sets a new industry standard for high power density applications Alpha and Omega Semiconductor introduced AONE36132 , a 25 V N-Channel MOSFET in a dual DFN 3.3 × 3.3 package which is ...
    Discretes · Power » Alpha & Omega » AONE36132
    15-02-2018
  7. Diodes Incorporated announced its most advanced dataline transient voltage suppressor (TVS) ever, the DESD3V3Z1BCSF-7 . Designed to provide exceptional TVS/ESD protection to the high-speed input/output ports of advanced systems-on-chips (SoCs) ...
    Discretes » Diodes » DESD3V3Z1BCSF-7
    14-02-2018
  8. Additional U-MOS IX-H devices offer lowest-in-class on-resistance Toshiba Electronics Europe has started to ship two new 100 V additions to its low-voltage U-MOS IX-H N-channel power MOSFET series. The new devices are ideally suited to power supply ...
    Discretes · Power » Toshiba » TPH3R70APL, TPN1200APL
    07-02-2018
  9. Diode combines up to 30 kV protection with small footprint Toshiba Electronics Europe has introduced a new bi-directional electrostatic discharge (ESD) protection diode DF2B7ASL which is mainly targeting interface protection in applications with ...
    Discretes · Interfaces » Toshiba » DF2B7ASL
    18-01-2018
  10. Ideal for applications that demand improved reliability and thermal management Littelfuse introduced four new series of 1200 V silicon carbide (SiC) Schottky Diodes from its GEN2 product family, which was originally released in May 2017. The ...
    Discretes · Power » Littelfuse » LSIC2SD120A08, LSIC2SD120A15, LSIC2SD120A20, LSIC2SD120C08
    16-01-2018
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