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  1. Ampleon announced the high power rugged BLF189XRA RF power transistor aimed at broadcast FM radio applications transmitting in the 88 108 MHz frequency range. Operating from an industry standard 50 V power source the BLF189XRA delivers over 1,600 ...
    Discretes » Ampleon » BLF189XRA
    24-09-2018
  2. Lower losses and higher switching deliver highly efficient, space-saving solutions and reduced overall system costs ON Semiconductor has announced an expansion of its silicon carbide (SiC) Schottky diode portfolio to include devices specifically ...
    Discretes · Automotive » ON Semiconductor » FFSHx0120, FFSHx065
    19-09-2018
  3. The EPC2051 offers power systems designers a 100 V, 25 mΩ, power transistor capable of 37 A pulsed in an extremely small chip-scale package. These new devices are ideal for applications such as 48 V power converters, LiDAR, and LED lighting. ...
    Discretes · Power » EPC » EPC2051
    13-09-2018
  4. New devices increase power supply efficiency even further Toshiba Electronics Europe has launched a new series of next-generation 650 V power MOSFETs that are intended for use in server power supplies in data centers, solar (PV) power conditioners, ...
    Discretes · Power » Toshiba » TK040N65Z
    22-08-2018
  5. Torex Semiconductor has launched the XBP06V0U25R-G as a new series of transient voltage suppressors (TVS). The XBP06V0U25R-G series of products are mounted in close proximity to an external interface to protect downstream ICs from electrostatic ...
    Discretes » Torex » XBP06V0U25R-G
    21-08-2018
  6. Infineon Technologies is launching a new 1200 V IGBT generation TRENCHSTOP™ IGBT6. It is the first discrete IGBT duopack on the market manufactured on 12 inch wafer size. The new IGBT technology is designed to fulfill the increasing customer ...
    07-08-2018
  7. Optimal power efficiency using the latest technology sets a new industry standard for high power density applications Alpha and Omega Semiconductor introduced the AONX38168 , which utilizes the latest 25 V N-Channel MOSFET Technology. The XSPairFET ...
    Discretes · Power » Alpha & Omega » AONX38168
    11-07-2018
  8. Infineon Technologies expands its product portfolio of the thin-wafer technology TRENCHSTOP™5 IGBT. The new product family is offering up to 40 A 650 V IGBT, co-packed with a full rated 40 A diode in a surface mounting TO-263-3 also known as ...
    12-06-2018
  9. Industry’s only available devices compatible with Power-SO8 footprint to meet new standard for battery-powered equipment. Nexperia announced that two of its LFPAK56-packaged portfolio of MOSFETs are now available with improved creepage and ...
    Discretes · Power » Nexperia » PSMN0R9-30ULD, PSMN0R9-40ULD
    08-06-2018
  10. Reduced on-resistance resulting from the use of a new, small, low-resistance package Toshiba Electronics Europe has released two new MOSFETs housed in the small low-resistance SOP Advance (WF) package in 5 mm × 6 mm size, as new additions to ...
    Discretes · Power » Toshiba » TPHR7904PB, TPH1R104PB
    02-05-2018
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