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Datasheet Toshiba TPN1200APL

ManufacturerToshiba
SeriesTPN1200APL
Part NumberTPN1200APL

Power MOSFET (N-ch single 60V<VDSS≤150V)

Datasheets

  • Download » Datasheet, PDF, 530 Kb
    TPN1200APL Data sheet/English
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    TPN1200APL
    MOSFETs Silicon N-channel MOS (U-MOS-H) TPN1200APL
    1. Applications High-Efficiency DC-DC Converters Switching Voltage Regulators Motor Drivers 2. Features
    (1) High-speed switching (2) Small gate charge: QSW = 7.5 nC (typ.) (3) Small output charge: Qoss = 24 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 9.8 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (6) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.3 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source
    4: Gate
    5, 6, 7, 8: Drain TSON Advance Start of commercial production
    ©2017
    Toshiba Electronic Devices & Storage Corporation 1 2017-10
    2017-10-02
    Rev.1.0 TPN1200APL
    4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified)
    Characteristics Symbol Rating Unit Drain-source voltage VDSS 100 V Gate-source voltage VGSS ±20 ID 40 Drain current (DC) (Tc = 25 ) (Note 1) Drain current (DC) (Silicon limit) (Note 1), (Note 2) Drain current (pulsed) (t = 100 µs) (Note 1) Power dissipation (Tc = 25 ) A 66
    IDP 160 PD 104 W Power dissipation (Note 3) 2.67 Power dissipation (Note 4) 0.63 Single-pulse avalanche energy (Note 5) EAS 39 mJ Single-pulse avalanche current (Note 5) IAS 32 A
     Channel temperature Tch 175 Storage temperature Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
    significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
    if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
    ratings.
    Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
    ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
    report and estimated failure rate, etc). 5. Thermal Characteristics
    Characteristics Symbol Max Unit
    /W Channel-to-case thermal resistance (Tc = 25 ) Rth(ch-c) 1.43 Channel-to-ambient thermal resistance (Ta = 25 ) (Note 3) Rth(ch-a) 56 Channel-to-ambient thermal resistance (Ta = 25 ) (Note 4) Rth(ch-a) 235 Note 1: Ensure that the channel temperature does not exceed 175 .
    Note 2: Limited by silicon chip capability. ...

Prices

Status

Lifecycle StatusNew Product

Packaging

Manufacture Package CodeTSON Advance

Parametrics

Application ScopeHigh efficiency DC/DC converters / Motor drivers / Switching regulators
Assembly basesMalaysia
Drain-Source on-resistance (Max) [|VGS|=10V]0.0115 Ω
Drain-Source on-resistance (Max) [|VGS|=4.5V]0.02 Ω
GenerationU-MOSⅨ-H
Input capacitance (Typ.)1425 pF
PolarityN-ch
Total gate charge (Typ.)24 nC

Eco Plan

RoHSCompliant

Manufacturer's Classification

  • MOSFETs
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