NEC PNP SILICON TRANSISTOR 2SA992
OESCR IPTION The 2SA992 is best for use as the middle range amplifier in Hi-Fi
stereo control amplifiers; power amplifiers, and etc. PACKAGE DIMENSiONs
in millimeters (inchesl FEATURES • High Voltage. VCEO : -120 V • Low Output Capacitance. 5.2 MAX. hFE : 500 TYP. (VCE =-6.0 V, Ic =-1.0 mA) • High hFE. (0.204 MAX.) Cob : 2.0 pF TYP. (VCB =-30 V) I I • Super Low Noise. NV : 25 mV TYP. (See test circuit.)
• Complementary to 2SC1845. ABSOLUTE MAXIMUM RATINGS
Maximum Temp.eratures
. -55to+125°C Storage Temperature
Junction Temperature . + 125°C Maximum Maximum Power Dissipation (Ta = 25°C)
Total Power Dissipation . 500 mW Maximum Voltages and Currents (Ta = 25 oe)
VCBO Collector to Base Voltage -120 V . -120 V VCEO Collector to Emitter Voltage
VEBO Emitter to Base Voltage . -5.0 V Ic Collector Current . -50mA IB Base Current -10mA 1. EMITTER
2. COLLECTOR
3. BASE EIAJ: SC-43B
JEDEC: TO-92
I E C : PA33 ELECTRICAL CHARACTERISTICS (Ta =25 °C)
SYMBOL. MIN. TYP. hFE1 OC Current Gain 150 500 hFE2 OC Current Gain 200 500 fT Gain Bandwidt'h Product 50 100 Cob Output Capacitance 2.0 NV Noise Voltage 25 ICBO Collector Cutoff Current CHARACTERISTIC IEBO Emitter Cutoff Current VBE Base to Emitter Voltage VCE(sat) Collector Saturation Voltage -0.55 MAX. UNIT TEST CONOITIONS
VCE =-6.0 V, IC =-0.1 mA 800 VCE =-6.0 V, IC =-1.0 mA
MHz VCE =-6.0 V, IE = 1.0 mA 3.0 pF VCB=-30 V, le=O, f=1.0 MHz 40 mV -50 nA VCE =-5.0 V, IC =-1.0 mA, RG = 100 kn
Gv =80 dB, f=10 Hz to 1.0 kHz
VCB =-120 V, IE =0 -50 nA VEB =-5.0 V, IC =0 -0.61 -0.65 v VCE =-6.0 V, IC =-1.0 mA -0.09 -0.30 V IC=-10 mA, IB=-1.0 mA Classification of hFE2
E 400 -800
hFE Test Conditions : VCE =-6.0 V, IC=-1.0 mA 125 NEC 2SA992 TYPICAL CHARACTER ISTICS (Ta = 25 °c unless otherwise noted) -}.O 600 500 f\. 1 c; .2 °300 I\. n. 50 75 100 ." V
i;'" !:? -0.2 \ '\ 125 . v V ISO V …
