Datasheet Diodes DMTH4008LFDFWQ

Manufacturer	Diodes
Series	DMTH4008LFDFWQ

40V +175°C N-Channel Enhancement Mode MOSFET

Datasheets

PDF, 484 Kb, Language: en, File uploaded: Sep 9, 2025, Pages: 8
40V +175?C N-Channel Enhancement Mode MOSFET

Extract from the document

This MOSFET is designed to meet the stringent requirements of automotive applications.

It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: power-management functions, DC-DC converters, and backlighting.

Parametrics

Parameters / Models	DMTH4008LFDFWQ-13	DMTH4008LFDFWQ-13R	DMTH4008LFDFWQ-13R-A	DMTH4008LFDFWQ-7	DMTH4008LFDFWQ-7R	DMTH4008LFDFWQ-7R-A
AEC Qualified	Yes	Yes	Yes	Yes	Yes	Yes
CISS Condition @\|VDS\| (V)	20 V	20 V	20 V	20 V	20 V	20 V
CISS Typ (pF)	1030 pF	1030 pF	1030 pF	1030 pF	1030 pF	1030 pF
Compliance (Only Automotive Supports PPAP)	Automotive	Automotive	Automotive	Automotive	Automotive	Automotive
ESD Diodes (Y\|N)	No	No	No	No	No	No
PD @TA = +25°C (W)	2.35 W	2.35 W	2.35 W	2.35 W	2.35 W	2.35 W
Polarity	N	N	N	N	N	N
QG Typ @ \|VGS\| = 10V (nC)	14.2 nC	14.2 nC	14.2 nC	14.2 nC	14.2 nC	14.2 nC
QG Typ @ \|VGS\| = 4.5V (nC)	6.8 nC	6.8 nC	6.8 nC	6.8 nC	6.8 nC	6.8 nC
RDS(ON)Max@ VGS(10V) (mΩ)	11.5 mΩ	11.5 mΩ	11.5 mΩ	11.5 mΩ	11.5 mΩ	11.5 mΩ
RDS(ON)Max@ VGS(4.5V) (mΩ)	18 mΩ	18 mΩ	18 mΩ	18 mΩ	18 mΩ	18 mΩ
\|IDS\| @TA = +25°C (A)	11.6 A	11.6 A	11.6 A	11.6 A	11.6 A	11.6 A
\|VDS\| (V)	40 V	40 V	40 V	40 V	40 V	40 V
\|VGS(TH)\| Max (V)	3 V	3 V	3 V	3 V	3 V	3 V
\|VGS(TH)\| Min (V)	1 V	1 V	1 V	1 V	1 V	1 V
\|VGS\| (±V)	20 ±V	20 ±V	20 ±V	20 ±V	20 ±V	20 ±V

Series: DMTH4008LFDFWQ (6)