Datasheet MCP6001, MCP6001R, MCP6001U, MCP6002, MCP6004 (Microchip) - 4
| Manufacturer | Microchip |
| Description | The MCP6001 is a single general purpose op amp offering rail-to-rail input and output over the 1.8 to 6V operating range |
| Pages / Page | 42 / 4 — MCP6001/1R/1U/2/4. AC ELECTRICAL SPECIFICATIONS. Parameters. Sym. Min. … |
| File Format / Size | PDF / 794 Kb |
| Document Language | English |
MCP6001/1R/1U/2/4. AC ELECTRICAL SPECIFICATIONS. Parameters. Sym. Min. Typ. Max. Units. Conditions. AC Response. Noise
Model Line for this Datasheet
- MCP6001RT-E/OT MCP6001RT-E/OTVAO MCP6001RT-I/OT MCP6001RT-I/OTVAO MCP6001T-E/LT MCP6001T-E/LTVAO MCP6001T-E/OT MCP6001T-E/OTVAO MCP6001T-I/LT MCP6001T-I/LTVAO MCP6001T-I/OT MCP6001T-I/OT-HCM MCP6001T-I/OTVAO MCP6001UT-E/OT MCP6001UT-E/OTVAO MCP6001UT-I/OT
- MCP6002-E/MC MCP6002-E/MCVAO MCP6002-E/MS MCP6002-E/MSVAO MCP6002-E/P MCP6002-E/SN MCP6002-E/SNVAO MCP6002-I/MS MCP6002-I/P MCP6002-I/SN MCP6002-I/SNVAO MCP6002T-E/MC MCP6002T-E/MCVAO MCP6002T-E/MS MCP6002T-E/MSVAO MCP6002T-E/SN MCP6002T-E/SNVAO MCP6002T-I/MS MCP6002T-I/MSVAO MCP6002T-I/SN MCP6002T-I/SNVAO
Text Version of Document
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MCP6001/1R/1U/2/4 AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2, V ≈ L = VDD/2, VOUT VDD/2, RL = 10 kΩ to VL, and CL = 60 pF (refer to Figure 1-1).
Parameters Sym Min Typ Max Units Conditions AC Response
Gain Bandwidth Product GBWP — 1.0 — MHz Phase Margin PM — 90 — ° G = +1 V/V Slew Rate SR — 0.6 — V/µs
Noise
Input Noise Voltage Eni — 6.1 — µVp-p f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni — 28 — nV/√Hz f = 1 kHz Input Noise Current Density ini — 0.6 — fA/√Hz f = 1 kHz
TEMPERATURE SPECIFICATIONS Electrical Characteristics:
Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions Temperature Ranges
Industrial Temperature Range TA -40 — +85 °C Extended Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C
Note
Storage Temperature Range TA -65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SC70 θJA — 331 — °C/W Thermal Resistance, 5L-SOT-23 θJA — 256 — °C/W Thermal Resistance, 8L-PDIP θJA — 85 — °C/W Thermal Resistance, 8L-SOIC (150 mil) θJA — 163 — °C/W Thermal Resistance, 8L-MSOP θJA — 206 — °C/W Thermal Resistance, 8L-DFN (2x3) θJA — 68 — °C/W Thermal Resistance, 14L-PDIP θJA — 70 — °C/W Thermal Resistance, 14L-SOIC θJA — 120 — °C/W Thermal Resistance, 14L-TSSOP θJA — 100 — °C/W
Note:
The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C. DS21733J-page 4 © 2009 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 1.1 Test Circuits FIGURE 1-1: AC and DC Test Circuit for Most Specifications. 2.0 Typical Performance Curves FIGURE 2-1: Input Offset Voltage. FIGURE 2-2: Input Offset Voltage Drift. FIGURE 2-3: Input Offset Quadratic Temp. Co. FIGURE 2-4: Input Offset Voltage vs. Common Mode Input Voltage at VDD = 1.8V. FIGURE 2-5: Input Offset Voltage vs. Common Mode Input Voltage at VDD = 5.5V. FIGURE 2-6: Input Offset Voltage vs. Output Voltage. FIGURE 2-7: Input Bias Current at +85°C. FIGURE 2-8: Input Bias Current at +125°C. FIGURE 2-9: CMRR, PSRR vs. Ambient Temperature. FIGURE 2-10: PSRR, CMRR vs. Frequency. FIGURE 2-11: Open-Loop Gain, Phase vs. Frequency. FIGURE 2-12: Input Noise Voltage Density vs. Frequency. FIGURE 2-13: Output Short Circuit Current vs. Power Supply Voltage. FIGURE 2-14: Output Voltage Headroom vs. Output Current Magnitude. FIGURE 2-15: Quiescent Current vs. Power Supply Voltage. FIGURE 2-16: Small-Signal, Non-Inverting Pulse Response. FIGURE 2-17: Large-Signal, Non-Inverting Pulse Response. FIGURE 2-18: Slew Rate vs. Ambient Temperature. FIGURE 2-19: Output Voltage Swing vs. Frequency. FIGURE 2-20: Measured Input Current vs. Input Voltage (below VSS). FIGURE 2-21: The MCP6001/2/4 Show No Phase Reversal. 3.0 Pin Descriptions TABLE 3-1: Pin Function Table 3.1 Analog Outputs 3.2 Analog Inputs 3.3 Power Supply Pins 3.4 Exposed Thermal Pad (EP) 4.0 Application Information 4.1 Rail-to-Rail Inputs FIGURE 4-1: Simplified Analog Input ESD Structures. FIGURE 4-2: Protecting the Analog Inputs. 4.2 Rail-to-Rail Output 4.3 Capacitive Loads FIGURE 4-3: Output resistor, RISO stabilizes large capacitive loads. FIGURE 4-4: Recommended RISO values for Capacitive Loads. 4.4 Supply Bypass 4.5 Unused Op Amps FIGURE 4-5: Unused Op Amps. 4.6 PCB Surface Leakage FIGURE 4-6: Example Guard Ring Layout for Inverting Gain. 4.7 Application Circuits FIGURE 4-7: Instrumentation Amplifier with Unity-Gain Buffer Inputs. FIGURE 4-8: Active Second-Order Low-Pass Filter. FIGURE 4-9: Peak Detector with Clear and Sample CMOS Analog Switches. 5.0 Design AIDS 5.1 SPICE Macro Model 5.2 FilterLab® Software 5.3 Mindi™ Circuit Designer & Simulator 5.4 Microchip Advanced Part Selector (MAPS) 5.5 Analog Demonstration and Evaluation Boards 5.6 Application Notes 6.0 Packaging Information 6.1 Package Marking Information
MCP6001/1R/1U/2/4 AC ELECTRICAL SPECIFICATIONS
Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8 to 5.5V, VSS = GND, VCM = VDD/2, V ≈ L = VDD/2, VOUT VDD/2, RL = 10 kΩ to VL, and CL = 60 pF (refer to Figure 1-1).
Parameters Sym Min Typ Max Units Conditions AC Response
Gain Bandwidth Product GBWP — 1.0 — MHz Phase Margin PM — 90 — ° G = +1 V/V Slew Rate SR — 0.6 — V/µs
Noise
Input Noise Voltage Eni — 6.1 — µVp-p f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni — 28 — nV/√Hz f = 1 kHz Input Noise Current Density ini — 0.6 — fA/√Hz f = 1 kHz
TEMPERATURE SPECIFICATIONS Electrical Characteristics:
Unless otherwise indicated, VDD = +1.8V to +5.5V and VSS = GND.
Parameters Sym Min Typ Max Units Conditions Temperature Ranges
Industrial Temperature Range TA -40 — +85 °C Extended Temperature Range TA -40 — +125 °C Operating Temperature Range TA -40 — +125 °C
Note
Storage Temperature Range TA -65 — +150 °C
Thermal Package Resistances
Thermal Resistance, 5L-SC70 θJA — 331 — °C/W Thermal Resistance, 5L-SOT-23 θJA — 256 — °C/W Thermal Resistance, 8L-PDIP θJA — 85 — °C/W Thermal Resistance, 8L-SOIC (150 mil) θJA — 163 — °C/W Thermal Resistance, 8L-MSOP θJA — 206 — °C/W Thermal Resistance, 8L-DFN (2x3) θJA — 68 — °C/W Thermal Resistance, 14L-PDIP θJA — 70 — °C/W Thermal Resistance, 14L-SOIC θJA — 120 — °C/W Thermal Resistance, 14L-TSSOP θJA — 100 — °C/W
Note:
The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any case, the internal Junction Temperature (TJ) must not exceed the Absolute Maximum specification of +150°C. DS21733J-page 4 © 2009 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 1.1 Test Circuits FIGURE 1-1: AC and DC Test Circuit for Most Specifications. 2.0 Typical Performance Curves FIGURE 2-1: Input Offset Voltage. FIGURE 2-2: Input Offset Voltage Drift. FIGURE 2-3: Input Offset Quadratic Temp. Co. FIGURE 2-4: Input Offset Voltage vs. Common Mode Input Voltage at VDD = 1.8V. FIGURE 2-5: Input Offset Voltage vs. Common Mode Input Voltage at VDD = 5.5V. FIGURE 2-6: Input Offset Voltage vs. Output Voltage. FIGURE 2-7: Input Bias Current at +85°C. FIGURE 2-8: Input Bias Current at +125°C. FIGURE 2-9: CMRR, PSRR vs. Ambient Temperature. FIGURE 2-10: PSRR, CMRR vs. Frequency. FIGURE 2-11: Open-Loop Gain, Phase vs. Frequency. FIGURE 2-12: Input Noise Voltage Density vs. Frequency. FIGURE 2-13: Output Short Circuit Current vs. Power Supply Voltage. FIGURE 2-14: Output Voltage Headroom vs. Output Current Magnitude. FIGURE 2-15: Quiescent Current vs. Power Supply Voltage. FIGURE 2-16: Small-Signal, Non-Inverting Pulse Response. FIGURE 2-17: Large-Signal, Non-Inverting Pulse Response. FIGURE 2-18: Slew Rate vs. Ambient Temperature. FIGURE 2-19: Output Voltage Swing vs. Frequency. FIGURE 2-20: Measured Input Current vs. Input Voltage (below VSS). FIGURE 2-21: The MCP6001/2/4 Show No Phase Reversal. 3.0 Pin Descriptions TABLE 3-1: Pin Function Table 3.1 Analog Outputs 3.2 Analog Inputs 3.3 Power Supply Pins 3.4 Exposed Thermal Pad (EP) 4.0 Application Information 4.1 Rail-to-Rail Inputs FIGURE 4-1: Simplified Analog Input ESD Structures. FIGURE 4-2: Protecting the Analog Inputs. 4.2 Rail-to-Rail Output 4.3 Capacitive Loads FIGURE 4-3: Output resistor, RISO stabilizes large capacitive loads. FIGURE 4-4: Recommended RISO values for Capacitive Loads. 4.4 Supply Bypass 4.5 Unused Op Amps FIGURE 4-5: Unused Op Amps. 4.6 PCB Surface Leakage FIGURE 4-6: Example Guard Ring Layout for Inverting Gain. 4.7 Application Circuits FIGURE 4-7: Instrumentation Amplifier with Unity-Gain Buffer Inputs. FIGURE 4-8: Active Second-Order Low-Pass Filter. FIGURE 4-9: Peak Detector with Clear and Sample CMOS Analog Switches. 5.0 Design AIDS 5.1 SPICE Macro Model 5.2 FilterLab® Software 5.3 Mindi™ Circuit Designer & Simulator 5.4 Microchip Advanced Part Selector (MAPS) 5.5 Analog Demonstration and Evaluation Boards 5.6 Application Notes 6.0 Packaging Information 6.1 Package Marking Information
