Datasheet MMBT3906T (ON Semiconductor) - 6

ManufacturerON Semiconductor
DescriptionPNP Bipolar Transistor
Pages / Page7 / 6 — MMBT3906TT1. STATIC CHARACTERISTICS. Figure 14. DC Current Gain. Figure …
Revision3
File Format / SizePDF / 97 Kb
Document LanguageEnglish

MMBT3906TT1. STATIC CHARACTERISTICS. Figure 14. DC Current Gain. Figure 15. Collector Saturation Region

MMBT3906TT1 STATIC CHARACTERISTICS Figure 14 DC Current Gain Figure 15 Collector Saturation Region

Model Line for this Datasheet

Text Version of Document

MMBT3906TT1 STATIC CHARACTERISTICS
2.0 TJ = +125°C VCE = 1.0 V 1.0 +25°C 0.7 -55°C 0.5 GAIN (NORMALIZED) 0.3 0.2 FEh , DC CURRENT 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA)
Figure 14. DC Current Gain
1.0 TS) TJ = 25°C 0.8 TAGE (VOL IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 OR EMITTER VOL 0.2 CEV , COLLECT 00.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA)
Figure 15. Collector Saturation Region
1.0 1.0 T C) J = 25°C VBE(sat) @ IC/IB = 10 ° 0.5 0.8 q +25 VC FOR VCE(sat) °C TO +125°C VBE @ VCE = 1.0 V TS) 0 -55°C TO +25°C 0.6 -0.5 TAGE (VOL 0.4 +25°C TO +125°C , VOL TURE COEFFICIENTS (mV/ -1.0 V qVS FOR VBE(sat) -55°C TO +25°C 0.2 VCE(sat) @ IC/IB = 10 -1.5 , TEMPERA Vθ 0 -2.0 1.0 2.0 5.0 10 20 50 100 200 0 20 40 60 80 100 120 140 160 180 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 16. “ON” Voltages Figure 17. Temperature Coefficients www.onsemi.com 6
EMS supplier