Datasheet GS66508T (GaN Systems) - 3

GS66508T Top-side cooled 650 V E-mode GaN transistor Preliminary Datasheet Electrical Characteristics (Typical values at TJ = 25 °C, VGS = 6 V unless otherwise noted)
Parameters Sym. Min. Typ. Max. Units Conditions
Drain-to-Source Blocking Voltage BVDS 650 V VGS = 0 V, IDSS = 50 µA V Drain-to-Source On Resistance R GS = 6 V, TJ = 25 °C DS(on) 50 63 mΩ ID = 9 A V Drain-to-Source On Resistance R GS = 6 V, TJ = 150 °C DS(on) 129 mΩ ID = 9 A Gate-to-Source Threshold VGS(th) 1.1 1.7 2.6 V VDS = VGS, ID = 7 mA Gate-to-Source Current IGS 160

µA VGS = 6 V, VDS = 0 V Reverse Gate Leakage Current IRGL 10

nA VGS = -10 V, VDS = 0 V Gate Plateau Voltage Vplat 3

V VDS = 400 V, ID = 30 A V Drain-to-Source Leakage Current I DS = 650 V, VGS = 0 V DSS 2 50 µA TJ = 25 °C V Drain-to-Source Leakage Current I DS = 650 V, VGS = 0 V DSS 400 µA TJ = 150 °C Internal Gate Resistance RG 1.1 Ω f = 25 MHz, open drain Input Capacitance CISS 260 pF VDS = 400 V Output Capacitance COSS 65 pF VGS = 0 V f = 1 MHz Reverse Transfer Capacitance CRSS 2 pF Effective Output Capacitance C Energy Related (Note 4) O(ER) 88 pF VGS = 0 V VDS = 0 to 400 V Effective Output Capacitance C Time Related (Note 5) O(TR) 142 pF Total Gate Charge QG 5.8 nC VGS = 0 to 6 V Gate-to-Source Charge QGS 2.2 nC VDS = 400 V Gate-to-Drain Charge QGD 1.8 nC Output Charge QOSS 57 nC VGS = 0 V, VDS = 400 V Reverse Recovery Charge QRR 0 nC (4) CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0 V to the stated VDS (5) CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0 V to the stated VDS Rev 180424 © 2009-2018 GaN Systems Inc. 3 This information pertains to a product under development. Its characteristics and specifications are subject to change without notice. Submit datasheet feedback