Datasheet C3M0016120K (Wolfspeed) - 5
| Manufacturer | Wolfspeed |
| Description | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
| Pages / Page | 12 / 5 — Typical Performance. 250. -10. Conditions:. VDS = 20 V. tp < 200 µs. … |
| File Format / Size | PDF / 1.1 Mb |
| Document Language | English |
Typical Performance. 250. -10. Conditions:. VDS = 20 V. tp < 200 µs. 200. (A). VGS = -4 V. -50. , I DS. 150. rent. GS = 0 V. J = -40 °C. -100
Model Line for this Datasheet
Text Version of Document
Typical Performance 250 -10 -8 -6 -4 -2 0 Conditions: 0 VDS = 20 V tp < 200 µs 200 (A) (A) VGS = -4 V -50 , I DS , I DS 150 V rent GS = 0 V T rent J = -40 °C -100 T ce Cur J = 175 °C ce Cur VGS = -2 V 100 TJ = 25 °C in-Sour -150 in-Sour Dra 50 Dra -200 Conditions: 0 TJ = -40°C 0 2 4 6 8 10 12 tp < 200 µs -250 Gate-Source Voltage, VGS (V) Drain-Source Voltage VDS (V)
Figure 7. Transfer Characteristic for Figure 8. Body Diode Characteristic at -40 ºC Various Junction Temperatures
-10 -8 -6 -4 -2 0 -10 -8 -6 -4 -2 0 0 0 (A) VGS = -4 V -50 (A) -50 , I DS V , I DS V GS = 0 V GS = -4 V V rent rent GS = 0 V -100 V -100 GS = -2 V ce Cur ce Cur VGS = -2 V -150 in-Sour -150 in-Sour Dra Dra -200 -200 Conditions: Conditions: TJ = 25°C TJ = 175°C tp < 200 µs tp < 200 µs -250 -250 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 175 ºC
4.0 16 Conditons Conditions: 3.5 VGS = VDS IDS = 20 A IDS = 23 mA IGS = 50 mA 12 VDS = 800 V 3.0 TJ = 25 °C (V) (V) 2.5 8 2.0 oltage, V th oltage, V GS 1.5 4 ld V ce V esho 1.0 Thr 0 Gate-Sour 0.5 0.0 -4 -40 -20 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 250 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
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C3M0016120K Rev. -, 04-2019
Figure 7. Transfer Characteristic for Figure 8. Body Diode Characteristic at -40 ºC Various Junction Temperatures
-10 -8 -6 -4 -2 0 -10 -8 -6 -4 -2 0 0 0 (A) VGS = -4 V -50 (A) -50 , I DS V , I DS V GS = 0 V GS = -4 V V rent rent GS = 0 V -100 V -100 GS = -2 V ce Cur ce Cur VGS = -2 V -150 in-Sour -150 in-Sour Dra Dra -200 -200 Conditions: Conditions: TJ = 25°C TJ = 175°C tp < 200 µs tp < 200 µs -250 -250 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 175 ºC
4.0 16 Conditons Conditions: 3.5 VGS = VDS IDS = 20 A IDS = 23 mA IGS = 50 mA 12 VDS = 800 V 3.0 TJ = 25 °C (V) (V) 2.5 8 2.0 oltage, V th oltage, V GS 1.5 4 ld V ce V esho 1.0 Thr 0 Gate-Sour 0.5 0.0 -4 -40 -20 0 20 40 60 80 100 120 140 160 180 0 50 100 150 200 250 Junction Temperature TJ (°C) Gate Charge, QG (nC)
Figure 11. Threshold Voltage vs. Temperature Figure 12. Gate Charge Characteristics
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C3M0016120K Rev. -, 04-2019
