Datasheet C3M0016120K (Wolfspeed) - 6
| Manufacturer | Wolfspeed |
| Description | Silicon Carbide Power MOSFET C3M Planar MOSFET Technology N-Channel Enhancement Mode |
| Pages / Page | 12 / 6 — Typical Performance. -10. (A). -50. , I DS. GS = 0 V. rent. VGS = 0 V. … |
| File Format / Size | PDF / 1.1 Mb |
| Document Language | English |
Typical Performance. -10. (A). -50. , I DS. GS = 0 V. rent. VGS = 0 V. VGS = 5 V. -100. ce Cur. GS = 10 V. VGS = 15 V. -150. in-Sour. Dra. -200
Model Line for this Datasheet
Text Version of Document
Typical Performance -10 -8 -6 -4 -2 0 -10 -8 -6 -4 -2 0 0 0 (A) -50 (A) -50 , I DS V , I DS GS = 0 V rent rent VGS = 0 V VGS = 5 V -100 VGS = 5 V -100 ce Cur V V GS = 10 V ce Cur GS = 10 V VGS = 15 V -150 in-Sour VGS = 15 V -150 in-Sour Dra Dra -200 -200 Conditions: Conditions: TJ = -40 °C TJ = 25 °C tp < 200 µs tp < 200 µs -250 -250 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
-10 -8 -6 -4 -2 0 200 0 180 160 (A) VGS = 0 V -50 , I DS 140 (µJ) rent 120 VGS = 5 V -100 100 ce Cur VGS = 10 V rgy, E OSS V Ene 80 GS = 15 V -150 in-Sour 60 Dra Stored 40 -200 20 Conditions: TJ = 175 °C 0 tp < 200 µs 0 200 400 600 800 1000 1200 -250 Drain-Source Voltage V Drain to Source Voltage, V DS (V) DS (V)
Figure 15. 3rd Quadrant Characteristic at 175 ºC Figure 16. Output Capacitor Stored Energy
100000 100000 Conditions: Conditions: TJ = 25 °C TJ = 25 °C VAC = 25 mV VAC = 25 mV 10000 C f = 100 kHz f = 100 kHz iss 10000 Ciss F) F) 1000 C 1000 ce (p oss ce (p C itan itan oss ac 100 ac 100 Cap Cap Crss Crss 10 10 1 1 0 50 100 150 200 0 200 400 600 800 1000 1200 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source Voltage (0 - 200V) Voltage (0 - 1200V)
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C3M0016120K Rev. -, 04-2019
Figure 13. 3rd Quadrant Characteristic at -40 ºC Figure 14. 3rd Quadrant Characteristic at 25 ºC
-10 -8 -6 -4 -2 0 200 0 180 160 (A) VGS = 0 V -50 , I DS 140 (µJ) rent 120 VGS = 5 V -100 100 ce Cur VGS = 10 V rgy, E OSS V Ene 80 GS = 15 V -150 in-Sour 60 Dra Stored 40 -200 20 Conditions: TJ = 175 °C 0 tp < 200 µs 0 200 400 600 800 1000 1200 -250 Drain-Source Voltage V Drain to Source Voltage, V DS (V) DS (V)
Figure 15. 3rd Quadrant Characteristic at 175 ºC Figure 16. Output Capacitor Stored Energy
100000 100000 Conditions: Conditions: TJ = 25 °C TJ = 25 °C VAC = 25 mV VAC = 25 mV 10000 C f = 100 kHz f = 100 kHz iss 10000 Ciss F) F) 1000 C 1000 ce (p oss ce (p C itan itan oss ac 100 ac 100 Cap Cap Crss Crss 10 10 1 1 0 50 100 150 200 0 200 400 600 800 1000 1200 Drain-Source Voltage, VDS (V) Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source Figure 18. Capacitances vs. Drain-Source Voltage (0 - 200V) Voltage (0 - 1200V)
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C3M0016120K Rev. -, 04-2019
