Datasheet PSMN0R9-25YLC (Nexperia) - 8
| Manufacturer | Nexperia |
| Description | N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology |
| Pages / Page | 15 / 8 — Nexperia. PSMN0R9-25YLC. N-channel 25 V 0.99 mΩ logic level MOSFET in … |
| Revision | 02042018 |
| File Format / Size | PDF / 933 Kb |
| Document Language | English |
Nexperia. PSMN0R9-25YLC. N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology. Fig 8
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Nexperia PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology
003a a f 530 003a a f 532 300 100 ID gfs (A) (S ) 75 200 50 100 25 Tj = 150 C Tj = 25 C 0 0 0 25 50 75 100 0 1 2 3 4 ID (A) VGS (V)
Fig 8. Forward transconductance as a function of Fig 9. Transfer characteristics; drain current as a drain current; typical values function of gate-source voltage; typical values
003a a f 529 003a a f 528 10-1 3 ID (A) VGS(th) 10-2 (V) Max (1mA) ID = 5mA 2 Min Typ Max 10-3 1mA 10-4 1 Min (5mA) 10-5 10-6 0 0 1 2 3 -60 0 60 120 180 VGS (V) Tj ( C)
Fig 10. Sub-threshold drain current as a function of Fig 11. Gate-source threshold voltage as a function of gate-source voltage junction temperature
PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 2 — 4 July 2011 8 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
003a a f 530 003a a f 532 300 100 ID gfs (A) (S ) 75 200 50 100 25 Tj = 150 C Tj = 25 C 0 0 0 25 50 75 100 0 1 2 3 4 ID (A) VGS (V)
Fig 8. Forward transconductance as a function of Fig 9. Transfer characteristics; drain current as a drain current; typical values function of gate-source voltage; typical values
003a a f 529 003a a f 528 10-1 3 ID (A) VGS(th) 10-2 (V) Max (1mA) ID = 5mA 2 Min Typ Max 10-3 1mA 10-4 1 Min (5mA) 10-5 10-6 0 0 1 2 3 -60 0 60 120 180 VGS (V) Tj ( C)
Fig 10. Sub-threshold drain current as a function of Fig 11. Gate-source threshold voltage as a function of gate-source voltage junction temperature
PSMN0R9-25YLC All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved
Product data sheet Rev. 2 — 4 July 2011 8 of 15
Document Outline 1. Product profile 1.1 General description 1.2 Features and benefits 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 6. Characteristics 7. Package outline 8. Revision history 9. Legal information 9.1 Data sheet status 9.2 Definitions 9.3 Disclaimers 9.4 Trademarks 10. Contact information 11. Contents
