Datasheet PMV65XPE (Nexperia)
| Manufacturer | Nexperia |
| Description | 20 V, P-channel Trench MOSFET |
| Pages / Page | 15 / 1 — PMV65XPE. 20 V, P-channel Trench MOSFET. 25 April 2014. Product data … |
| Revision | 04201705 |
| File Format / Size | PDF / 719 Kb |
| Document Language | English |
PMV65XPE. 20 V, P-channel Trench MOSFET. 25 April 2014. Product data sheet. 1. General description. 2. Features and benefits
Model Line for this Datasheet
Text Version of Document
link to page 1
PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Very fast switching • Enhanced power dissipation capability: Ptot = 890 mW • ElectroStatic Discharge (ESD) protection 2 kV HBM
3. Applications
• Relay driver • High speed line driver • High-side loadswitch • Switching circuits
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.3 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 67 78 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information
PMV65XPE 20 V, P-channel Trench MOSFET 25 April 2014 Product data sheet 1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
• Trench MOSFET technology • Very fast switching • Enhanced power dissipation capability: Ptot = 890 mW • ElectroStatic Discharge (ESD) protection 2 kV HBM
3. Applications
• Relay driver • High speed line driver • High-side loadswitch • Switching circuits
4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit
VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -12 - 12 V ID drain current VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - - -3.3 A
Static characteristics
RDSon drain-source on-state VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C - 67 78 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Document Outline 1. General description 2. Features and benefits 3. Applications 4. Quick reference data 5. Pinning information 6. Ordering information 7. Marking 8. Limiting values 9. Thermal characteristics 10. Characteristics 11. Test information 12. Package outline 13. Soldering 14. Revision history 15. Legal information