Datasheet SI7489DP (Vishay) - 2
| Manufacturer | Vishay |
| Description | P-Channel 100-V (D-S) MOSFET |
| Pages / Page | 13 / 2 — Si7489DP. SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. Typ. … |
| File Format / Size | PDF / 309 Kb |
| Document Language | English |
Si7489DP. SPECIFICATIONS. Parameter Symbol. Test. Conditions. Min. Typ. Max. Unit. Static. Dynamicb. Drain-Source Body Diode Characteristics
Model Line for this Datasheet
Text Version of Document
Si7489DP
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 V VDS Temperature Coefficient ΔVDS/TJ - 113 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 100 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta I ≥ D(on) VDS 5 V, VGS = - 10 V - 40 A VGS = - 10 V, ID = - 7.8 A 0.033 0.041 Drain-Source On-State Resistancea RDS(on) Ω VGS = - 4.5 V, ID = - 7.3 A 0.038 0.047 Forward Transconductancea gfs VDS = - 15 V, ID = - 7.8 A 38 S
Dynamicb
Input Capacitance Ciss 4600 Output Capacitance C V oss DS = - 50 V, VGS = 0 V, f = 1 MHz 230 pF Reverse Transfer Capacitance Crss 175 VDS = - 50 V, VGS = - 10 V, ID = - 7.8 A 106 160 Total Gate Charge Qg 54 81 nC Gate-Source Charge Qgs VDS = - 50 V, VGS = - 4.5 V, ID = - 7.8 A 14 Gate-Drain Charge Qgd 26 Gate Resistance Rg f = 1 MHz 4 Ω Turn-On Delay Time td(on) 15 25 Rise Time tr VDD = - 50 V, RL = 8.1 Ω 20 30 I Turn-Off Delay Time td(off) D ≅ - 6.2 A, VGEN = - 10 V, Rg = 1 Ω 110 165 Fall Time tf 100 150 ns Turn-On Delay Time td(on) 42 65 Rise Time tr VDD = - 50 V, RL = 8.1 Ω 160 240 I Turn-Off Delay Time td(off) D ≅ - 6.2 A, VGEN = - 4.5 V, Rg = 1 Ω 100 150 Fall Time tf 100 150
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 28 A Pulse Diode Forward Currenta ISM - 40 Body Diode Voltage VSD IS = - 6.2 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 60 90 ns Body Diode Reverse Recovery Charge Qrr 150 225 nC IF = - 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta 46 ns Reverse Recovery Rise Time tb 14 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73436 2 S09-0271-Rev. C, 16-Feb-09
Vishay Siliconix
SPECIFICATIONS
TJ = 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit Static
Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 100 V VDS Temperature Coefficient ΔVDS/TJ - 113 ID = - 250 µA mV/°C VGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.5 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA VDS = - 100 V, VGS = 0 V - 1 Zero Gate Voltage Drain Current IDSS µA VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta I ≥ D(on) VDS 5 V, VGS = - 10 V - 40 A VGS = - 10 V, ID = - 7.8 A 0.033 0.041 Drain-Source On-State Resistancea RDS(on) Ω VGS = - 4.5 V, ID = - 7.3 A 0.038 0.047 Forward Transconductancea gfs VDS = - 15 V, ID = - 7.8 A 38 S
Dynamicb
Input Capacitance Ciss 4600 Output Capacitance C V oss DS = - 50 V, VGS = 0 V, f = 1 MHz 230 pF Reverse Transfer Capacitance Crss 175 VDS = - 50 V, VGS = - 10 V, ID = - 7.8 A 106 160 Total Gate Charge Qg 54 81 nC Gate-Source Charge Qgs VDS = - 50 V, VGS = - 4.5 V, ID = - 7.8 A 14 Gate-Drain Charge Qgd 26 Gate Resistance Rg f = 1 MHz 4 Ω Turn-On Delay Time td(on) 15 25 Rise Time tr VDD = - 50 V, RL = 8.1 Ω 20 30 I Turn-Off Delay Time td(off) D ≅ - 6.2 A, VGEN = - 10 V, Rg = 1 Ω 110 165 Fall Time tf 100 150 ns Turn-On Delay Time td(on) 42 65 Rise Time tr VDD = - 50 V, RL = 8.1 Ω 160 240 I Turn-Off Delay Time td(off) D ≅ - 6.2 A, VGEN = - 4.5 V, Rg = 1 Ω 100 150 Fall Time tf 100 150
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current IS TC = 25 °C - 28 A Pulse Diode Forward Currenta ISM - 40 Body Diode Voltage VSD IS = - 6.2 A - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr 60 90 ns Body Diode Reverse Recovery Charge Qrr 150 225 nC IF = - 6.2 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta 46 ns Reverse Recovery Rise Time tb 14 Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 73436 2 S09-0271-Rev. C, 16-Feb-09