Datasheet 2N5060, 2N5061, 2N5062, 2N5064 (ON Semiconductor) - 3

ManufacturerON Semiconductor
DescriptionSensitive Gate Silicon Controlled Rectifiers 0.8 A RMS in TO-92 package
Pages / Page9 / 3 — 2N5060 Series. Voltage Current Characteristic of SCR. Symbol. Parameter. …
File Format / SizePDF / 208 Kb
Document LanguageEnglish

2N5060 Series. Voltage Current Characteristic of SCR. Symbol. Parameter. CURRENT DERATING. Figure 1. Maximum Case Temperature

2N5060 Series Voltage Current Characteristic of SCR Symbol Parameter CURRENT DERATING Figure 1 Maximum Case Temperature

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2N5060 Series Voltage Current Characteristic of SCR
+ Current Anode +
Symbol Parameter
VTM VDRM Peak Repetitive Off State Forward Voltage on state IDRM Peak Forward Blocking Current IH V I RRM Peak Repetitive Off State Reverse Voltage RRM at VRRM IRRM Peak Reverse Blocking Current VTM Peak on State Voltage + Voltage IH Holding Current Reverse Blocking Region IDRM at VDRM (off state) Forward Blocking Region Reverse Avalanche Region (off state) Anode −
CURRENT DERATING
° 130 a 130 TURE ( C) a = CONDUCTION ANGLE a 120 a = CONDUCTION ANGLE CASE MEASUREMENT 110 110 POINT - CENTER OF TEMPERA FLAT PORTION ° TYPICAL PRINTED 100 ABLE AMBIENT CIRCUIT BOARD dc 90 MOUNTING 90 TURE ( C) ABLE CASE 80 70 dc a = 30° 120° 180° 60° 90° TEMPERA ALLOW 70 , MAXIMUM ALLOW 50 60 T A a = 30° 60° 90° 120° 180° , MAXIMUM 50 30 T C 0 0.1 0.2 0.3 0.4 0.5 0 0.1 0.2 0.3 0.4 IT(AV), AVERAGE ON‐STATE CURRENT (AMP) IT(AV), AVERAGE ON‐STATE CURRENT (AMP)
Figure 1. Maximum Case Temperature Figure 2. Maximum Ambient Temperature www.onsemi.com 3