Datasheet EPC23111 (Efficient Power Conversion) - 3

eGaN® IC DATASHEET
EPC23111
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur and device reliability may be affected. All voltage parameters are absolute voltages referenced to PGND unless indicated otherwise. AGND and PGND are internal y connected.
Absolute Maximum Ratings SYMBOL PARAMETER MIN MAX UNITS
VIN DC power input voltage 100 SW(continuous) Output switching node voltage, continuous 100 VDRV External bias supply voltage (VDRV to AGND) 6 VDD Internal low-side supply voltage (VDD to AGND) 6 V VBOOT – VPHASE Internal high-side supply voltage (VBOOT to VPHASE), VPHASE = SW 6 PWM, EN PWM and enable logic input voltage -1 5.5 SD/STB VDD disable input voltage – standby, PWM shutdown function -1 5.5 TJ Junction temperature -40 150 °C TSTG Storage temperature -55 150
ESD Ratings ESD Ratings SYMBOL PARAMETER MIN MAX UNITS
HBM Human-body model (JEDEC JS-001)(1) +/-500 V CDM Charged-device model (JEDEC JESD22-C101)(2) +/-500 (1) JEDEC document JEP155 states that 500 V HBM al ows safe manufacturing with a standard ESD control process. (2) JEDEC document JEP157 states that 250 V CDM al ows safe manufacturing with a standard ESD control process.
Thermal Characteristics
RθJA_JEDEC is measured using JESD51-2 standard setup with 1 cubic foot enclosure with no forced air cooling, heat dissipated only through natural convection. The test used JEDEC Standard 4-layers PCB with 2 oz top and bottom surface layers and 1 oz buried layers. RθJA_EVB is measured using EPC90152 EVB with no forced air cooling, this rating is more indicative of actual application environment.
Thermal Characteristics SYMBOL PARAMETER TYP UNITS
RθJC_Top Thermal resistance, junction-to-case (Top surface of exposed die substrate) 0.61 RθJB_Bottom Thermal resistance, junction-to-board (At solder joints of VIN, SW and PGND pads) 3.7 °C/W RθJA_JEDEC Thermal resistance, junction-to-ambient (using JEDEC 51-2 PCB) 50 RθJA_EVB Thermal resistance, junction-to-ambient (using EPC90172 EVB) 27
Recommended Operating Conditions
For proper operation, the device should be used within the recommended conditions. If used outside the recommended operating conditions but within the absolute maximum ratings, the device may not be ful y functional, and this may affect device reliability, functionality, performance, and shorten the device’s lifetime. All voltage parameters are absolute voltages referenced to PGND unless indicated otherwise. AGND and PGND are internal y connected.
Recommended Operating Conditions SYMBOL PARAMETER MIN TYP MAX UNITS
VIN DC power input voltage - VDRV not tied to VDD 10 80 VIN(Boost Mode) DC power input voltage - VDRV tied to VDD (3) 0 SW(Q3 Mode) Output switch node, 3rd quadrant mode -2.5 VIN + 2.5 SW(pulse2ns) Output switch node, transient pulse < 2 ns -10 VIN + 10 VDRV External supply voltage (VDRV to AGND) 4.75 5 5.5 V VDD Internal low-side supply voltage (VDD to AGND) 4.75 5 5.5 VBOOT – VPHASE Internal high-side supply voltage (VBOOT to VPHASE), VPHASE = SW 4.75 5 5.5 PWM, EN PWM and enable logic input voltage 0 5 SD/STB VDD disable input voltage – standby (3), PWM shutdown function 0 5 TJ,op Operating junction temperature -40 125 °C (3) Tie VDD and VDRV together to disable the standby function, while maintaining the fast PWM shutdown, as shown in figure 12. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2026 | For more information: info@epc-co.com | 3